Issued Patents All Time
Showing 51–75 of 105 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 9484274 | Methods for reducing semiconductor substrate strain variation | Ehud Tzuri, Ellie Yieh | 2016-11-01 |
| 9478421 | Optically tuned hardmask for multi-patterning applications | Daniel Lee Diehl, Huixiong Dai, Yong Cao, Tingjun Xu, Weimin Zeng +1 more | 2016-10-25 |
| 9411237 | Resist hardening and development processes for semiconductor device manufacturing | Peng Xie, Huixiong Dai, Timothy Michaelson, Subhash Deshmukh | 2016-08-09 |
| 9395631 | Multi-beam pattern generators employing yaw correction when writing upon large substrates, and associated methods | — | 2016-07-19 |
| 9383649 | Digital grey tone lithography for 3D pattern formation | — | 2016-07-05 |
| 9377692 | Electric/magnetic field guided acid diffusion | Peng Xie, Ludovic Godet, Tristan Y. Ma, Joseph C. Olson | 2016-06-28 |
| 9337051 | Method for critical dimension reduction using conformal carbon films | Bencherki Mebarki, Bok Hoen Kim, Deenesh Padhi, Li Yan Miao, Pramit Manna +4 more | 2016-05-10 |
| 9337314 | Technique for selectively processing three dimensional device | Nilay A. Pradhan, Benjamin Colombeau, Naushad K. Variam, Mandar B. Pandit, Adam Brand | 2016-05-10 |
| 9177796 | Optically tuned hardmask for multi-patterning applications | Daniel Lee Diehl, Huixiong Dai, Yong Cao, Tingjun Xu, Weimin Zeng +1 more | 2015-11-03 |
| 8658242 | Resist fortification for magnetic media patterning | Roman Gouk, Steven Verhaverbeke, Li-Qun Xia, Yong Won Lee, Matthew D. Scotney-Castle +2 more | 2014-02-25 |
| 8357618 | Frequency doubling using a photo-resist template mask | Huixiong Dai, Li Yan Miao, Hao Chen | 2013-01-22 |
| 8338316 | Low temperature process for depositing a high extinction coefficient non-peeling optical absorber for a scanning laser surface anneal of implanted dopants | Vijay Parihar, Rajesh Kanuri, Marlon Edward Menezes | 2012-12-25 |
| 8293460 | Double exposure patterning with carbonaceous hardmask | Hui-Wan Chen, Chorng-Ping Chang, Yongmei Chen, Huixiong Dai, Jiahua Yu +7 more | 2012-10-23 |
| 8183150 | Semiconductor device having silicon carbide and conductive pathway interface | Judy H. Huang, Sudha Rathi, Christopher S. Ngai, Bok Hoen Kim | 2012-05-22 |
| 8148269 | Boron nitride and boron-nitride derived materials deposition method | Mihaela Balseanu, Yongmei Chen, Li Yan Miao, Victor Nguyen, Isabelita Roflox +2 more | 2012-04-03 |
| 8084310 | Self-aligned multi-patterning for advanced critical dimension contacts | Bencherki Mebarki, Li Yan Miao, Jen Shu | 2011-12-27 |
| 7989366 | Dopant activation in doped semiconductor substrates | Jeffrey C. Munro, Srinivas D. Nemani, Young S. Lee, Marlon Edward Menezes, Vijay Parihar | 2011-08-02 |
| 7968473 | Low temperature process for depositing a high extinction coefficient non-peeling optical absorber for a scanning laser surface anneal of implanted dopants | Vijay Parihar, Rajesh Kanuri, Marlon Edward Menezes | 2011-06-28 |
| 7910476 | Adhesion and minimizing oxidation on electroless CO alloy films for integration with low K inter-metal dielectric and etch stop | Hongbin Fang, Timothy Weidman, Fang Mei, Yaxin Wang, Arulkumar Shanmugasundram +1 more | 2011-03-22 |
| 7901869 | Double patterning with a double layer cap on carbonaceous hardmask | Huixiong Dai | 2011-03-08 |
| 7846849 | Frequency tripling using spacer mask having interposed regions | Keiji Horioka | 2010-12-07 |
| 7811924 | Air gap formation and integration using a patterning cap | Zhenjiang Cui, Mehul Naik, Kenneth P. MacWilliams | 2010-10-12 |
| 7807578 | Frequency doubling using spacer mask | Keiji Horioka | 2010-10-05 |
| 7737040 | Method of reducing critical dimension bias during fabrication of a semiconductor device | Melvin Montgomery, Alexander Buxbaum, Yung-Hee Yvette Lee, Jian Ding, Gilad Almogy +1 more | 2010-06-15 |
| 7718081 | Techniques for the use of amorphous carbon (APF) for various etch and litho integration schemes | Wei Liu, Jim Zhongyi He, Sang-Hoon Ahn, Meihua Shen, Hichem M'Saad +1 more | 2010-05-18 |