| 12471322 |
Horizontal GAA nano-wire and nano-slab transistors |
Hans-Joachim L. Gossmann |
2025-11-11 |
|
| 12402351 |
Gate all around device with fully-depleted silicon-on-insulator |
Ashish Pal, El Mehdi Bazizi, Myungsun Kim |
2025-08-26 |
|
| 12363948 |
Formation of gate all around device |
Myungsun Kim, Andy Lo, Eric Davey, Michael Stolfi |
2025-07-15 |
|
| 12334337 |
Integrated flowable low-k gap-fill and plasma treatment |
Myungsun Kim, Jingmei Liang, Martin Jay Seamons, Michael Stolfi |
2025-06-17 |
|
| 12327761 |
Void-free contact trench fill in gate-all-around FET architecture |
Nicolas L. Breil, Byeong-Chan Lee |
2025-06-10 |
|
| 12261047 |
Doping techniques |
Wolfgang Aderhold, Yi-Chiau Huang, Wei Liu, Abhilash J. Mayur |
2025-03-25 |
|
| 12249511 |
Treatments to improve device performance |
Steven C. H. Hung, Lin Dong, Johanes F. Swenberg, Linlin Wang |
2025-03-11 |
|
| 12243941 |
Conformal oxidation for gate all around nanosheet I/O device |
Myungsun Kim, Michael Stolfi, Andy Lo |
2025-03-04 |
|
| 12183798 |
Threshold voltage modulation for gate-all-around FET architecture |
Steven C. H. Hung, Myungsun Kim, Srinivas Gandikota, Yixiong Yang, Jacqueline S. Wrench +1 more |
2024-12-31 |
$49,330,000 |
| 12062708 |
Selective silicon etch for gate all around transistors |
Michael Stolfi, Myungsun Kim, Sanjay Natarajan |
2024-08-13 |
$69,975,000 |
| 12027607 |
Methods for GAA I/O formation by selective epi regrowth |
Matthias Bauer, Naved Siddiqui, Phillip Stout |
2024-07-02 |
$85,126,000 |
| 11923441 |
Gate all around I/O engineering |
Steven C. H. Hung, Andy Lo, Byeong-Chan Lee, Johanes F. Swenberg, Theresa Kramer Guarini +1 more |
2024-03-05 |
$73,319,000 |
| 11699755 |
Stress incorporation in semiconductor devices |
Ashish Pal, Mehdi Saremi, El Mehdi Bazizi |
2023-07-11 |
$39,838,000 |
| 11508828 |
Selective silicon etch for gate all around transistors |
Michael Stolfi, Myungsun Kim, Sanjay Natarajan |
2022-11-22 |
$48,755,000 |
| 11495500 |
Horizontal GAA nano-wire and nano-slab transistors |
Hans-Joachim L. Gossmann |
2022-11-08 |
$47,551,000 |
| 11456178 |
Gate interface engineering with doped layer |
Steven C. H. Hung, Abhishek Dube, Sheng-Chin Kung, Patricia M. Liu, Malcolm J. Bevan +1 more |
2022-09-27 |
$38,581,000 |
| 11450759 |
Gate all around I/O engineering |
Steven C. H. Hung, Andy Lo, Byeong-Chan Lee, Johanes F. Swenberg, Theresa Kramer Guarini +1 more |
2022-09-20 |
$25,949,000 |
| 11443948 |
Doping techniques |
Wolfgang Aderhold, Yi-Chiau Huang, Wei Liu, Abhilash J. Mayur |
2022-09-13 |
$52,107,000 |
| 11393916 |
Methods for GAA I/O formation by selective epi regrowth |
Matthias Bauer, Naved Siddiqui, Phillip Stout |
2022-07-19 |
$63,937,000 |
| 11373871 |
Methods and apparatus for integrated selective monolayer doping |
Wolfgang Aderhold, Andy Lo, Yi-Chiau Huang |
2022-06-28 |
$26,475,000 |
| 11309404 |
Integrated CMOS source drain formation with advanced control |
Tushar Mandrekar, Patricia M. Liu, Suketu Arun Parikh, Matthias Bauer, Dimitri Kioussis +2 more |
2022-04-19 |
$71,820,000 |
| 11271097 |
Cap oxidation for FinFET formation |
Steven C. H. Hung, Abhishek Dube, Sheng-Chin Kung, Patricia M. Liu, Malcolm J. Bevan +1 more |
2022-03-08 |
$69,139,000 |
| 11189479 |
Diffusion barrier layer |
Johanes F. Swenberg, Steven C. H. Hung |
2021-11-30 |
$50,552,000 |
| 11145761 |
Horizontal gate all around and FinFET device isolation |
Shiyu Sun, Naomi Yoshida, Theresa Kramer Guarini, Sung Won Jun, Vanessa Pena +4 more |
2021-10-12 |
$163,741,000 |
| 11024746 |
Gate all-around device |
Russell Chin Yee Teo |
2021-06-01 |
$74,932,000 |
