Patent Leaderboard
USPTO Patent Rankings Data through Dec 31, 2025
Home › Stress incorporation in semiconductor devices

Stress incorporation in semiconductor devices

US Patent 11699755 · Granted Jul 11, 2023

Estimated economic value: $39,838,000 ⓘ

Assignee

Inventors

View full patent text on Google Patents →

More Patents by These Inventors

Self-aligned wide backside power rail contacts to multiple transistor sources2025
Self-aligned wide backside power rail contacts to multiple transistor sources2025
Horizontal GAA nano-wire and nano-slab transistors2025
Nanosheet transistor devices and related fabrication methods2025
Gate all around device with fully-depleted silicon-on-insulator2025
Gate all around device with fully-depleted silicon-on-insulator2025
Gate all around device with fully-depleted silicon-on-insulator2025
Formation of gate all around device2025
Stacked transistors having an isolation region therebetween and a common gate el2025
Integrated flowable low-k gap-fill and plasma treatment2025
Void-free contact trench fill in gate-all-around FET architecture2025
Doping techniques2025