Issued Patents All Time
Showing 1–24 of 24 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 12402351 | Gate all around device with fully-depleted silicon-on-insulator | Ashish Pal, Benjamin Colombeau, Myungsun Kim | 2025-08-26 |
| 12074196 | Gradient doping epitaxy in superjunction to improve breakdown voltage | Ashish Pal, Yi Zheng | 2024-08-27 |
| 11929433 | Asymmetric FET for FDSOI devices | Ignasi Cortes, Alban Zaka, Tom Herrmann, Richard F. Taylor, III | 2024-03-12 |
| 11899376 | Methods for forming alignment marks | Prayudi Lianto, Liu Jiang, Marvin L. Bernt, Guan Huei See | 2024-02-13 |
| 11705490 | Graded doping in power devices | Ashish Pal, Siddarth A. Krishnan, Xing Chen, Lan Yu, Tyler Sherwood | 2023-07-18 |
| 11699755 | Stress incorporation in semiconductor devices | Ashish Pal, Mehdi Saremi, Benjamin Colombeau | 2023-07-11 |
| 11437274 | Fully self-aligned via | Regina Freed, Madhur Sachan, Susmit Singha Roy, Gabriela Alva, Ho-yung David Hwang +4 more | 2022-09-06 |
| 11245032 | Asymmetric FET for FDSOI devices | Ignasi Cortes, Alban Zaka, Tom Herrmann, Richard F. Taylor, III | 2022-02-08 |
| 11145726 | Doped through-contact structures | Sushant Mittal, Ashish Pal, Angada Bangalore Sachid | 2021-10-12 |
| 10930777 | Laterally double diffused metal oxide semiconductor (LDMOS) device on fully depleted silicon on insulator (FDSOI) enabling high input voltage | Ignasi Cortes Mayol, Alban Zaka, Tom Herrmann | 2021-02-23 |
| 10733354 | System and method employing three-dimensional (3D) emulation of in-kerf optical macros | Hojin Kim, Dongyue Yang, Dong-Ick Lee, Yue Zhou, Jae Ho Joung +2 more | 2020-08-04 |
| 10680065 | Field-effect transistors with a grown silicon-germanium channel | George R. Mulfinger, Timothy J. McArdle, Jody A. Fronheiser, Yi Qi | 2020-06-09 |
| 10644152 | Buried-channel low noise transistors and methods of making such devices | Alban Zaka, Luca Pirro, Tom Herrmann, Jan Hoentschel | 2020-05-05 |
| 10497803 | Fully depleted silicon on insulator (FDSOI) lateral double-diffused metal oxide semiconductor (LDMOS) for high frequency applications | Ignasi Cortes Mayol, Christian Schippel, Alban Zaka, Tom Herrmann | 2019-12-03 |
| 10283642 | Thin body field effect transistor including a counter-doped channel area and a method of forming the same | Alban Zaka, Ignasi Cortes Mayol, Tom Herrmann, Luca Pirro | 2019-05-07 |
| 10283584 | Capacitive structure in a semiconductor device having reduced capacitance variability | Alban Zaka, Ignasi Cortes Mayol, Tom Herrmann, Andrei Sidelnicov | 2019-05-07 |
| 10121846 | Resistor structure with high resistance based on very thin semiconductor layer | Alban Zaka, Ignasi Cortes Mayol, Tom Herrmann, John Morgan | 2018-11-06 |
| 9905707 | MOS capacitive structure of reduced capacitance variability | Andrei Sidelnicov, Alban Zaka, Venkata Naga Ranjith Kuma Nelluri, Juergen Faul | 2018-02-27 |
| 9881841 | Methods for fabricating integrated circuits with improved implantation processes | Alban Zaka, Ran Yan, Jan Hoentschel | 2018-01-30 |
| 9711513 | Semiconductor structure including a nonvolatile memory cell and method for the formation thereof | Alban Zaka, Sven Beyer, Tom Herrmann | 2017-07-18 |
| 9312189 | Methods for fabricating integrated circuits with improved implantation processes | Alban Zaka, Ran Yan, Jan Hoentschel | 2016-04-12 |
| 9263270 | Method of forming a semiconductor device structure employing fluorine doping and according semiconductor device structure | Alban Zaka, Ran Yan, Nicolas Sassiat, Jan Hoentschel | 2016-02-16 |
| 8994107 | Semiconductor devices and methods of forming the semiconductor devices including a retrograde well | Francis Benistant | 2015-03-31 |
| 8853752 | Performance enhancement in transistors by providing a graded embedded strain-inducing semiconductor region with adapted angles with respect to the substrate surface | Alban Zaka, Gabriela Dilliway, Bo Bai | 2014-10-07 |