Issued Patents All Time
Showing 1–13 of 13 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 10886419 | Semiconductor structure including a varactor and method for the formation thereof | Alexandru Romanescu, Christian Schippel | 2021-01-05 |
| 9960284 | Semiconductor structure including a varactor | Alexandru Romanescu, Christian Schippel | 2018-05-01 |
| 9812573 | Semiconductor structure including a transistor having stress creating regions and method for the formation thereof | Arkadiusz Malinowski, Chung Foong Tan, Maciej Wiatr | 2017-11-07 |
| 9620589 | Integrated circuits and methods of fabrication thereof | Ran Yan, Kun-Hsien Lin, Jan Hoentschel | 2017-04-11 |
| 9460955 | Integrated circuits with shallow trench isolations, and methods for producing the same | Ran Yan, Alban Zaka, Kun-Hsien Lin | 2016-10-04 |
| 9396950 | Low thermal budget schemes in semiconductor device fabrication | Jan Hoentschel, Torben Balzer, Alban Zaka | 2016-07-19 |
| 9263270 | Method of forming a semiconductor device structure employing fluorine doping and according semiconductor device structure | Alban Zaka, Ran Yan, El Mehdi Bazizi, Jan Hoentschel | 2016-02-16 |
| 9231045 | Methods for fabricating integrated circuits with polycrystalline silicon resistor structures using a replacment gate process flow, and the integrated circuits fabricated thereby | Jan Hoentschel, Stefan Flachowsky, Ralf Richter | 2016-01-05 |
| 9136266 | Gate oxide quality for complex MOSFET devices | Ran Yan, Jan Hoentschel, Torben Balzer | 2015-09-15 |
| 9029214 | Integrated circuits and methods for fabricating integrated circuits with improved silicide contacts | Jan Hoentschel, Stefan Flachowsky, Ran Yan | 2015-05-12 |
| 8999803 | Methods for fabricating integrated circuits with the implantation of fluorine | Shiang Yang Ong, Ran Yan, Torben Balzer | 2015-04-07 |
| 8951877 | Transistor with embedded strain-inducing material formed in cavities based on an amorphization process and a heat treatment | Carsten Grass, Jan Hoentschel, Ran Yan, Ralf Richter | 2015-02-10 |
| 8877582 | Methods of inducing a desired stress in the channel region of a transistor by performing ion implantation/anneal processes on the gate electrode | Ralf Richter, Peter Javorka, Stefan Flachowsky | 2014-11-04 |