Issued Patents All Time
Showing 25 most recent of 63 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 12328926 | Structures for a field-effect transistor that include a spacer structure | Dominik Martin Kleimaier, Ruchil Kumar Jain, Jan Höntschel, Steven Langdon, Felix Holzmüller | 2025-06-10 |
| 11387364 | Transistor with phase transition material region between channel region and each source/drain region | Avinash Lahgere, Prashanth Paramahans Manik, Ali Icel, Mohit Bajaj | 2022-07-12 |
| 10643885 | FDSOI channel control by implanted high-k buried oxide | Philipp Steinmann | 2020-05-05 |
| 10340380 | Three-dimensional transistor with improved channel mobility | Stefan Flachowsky, Jan Hoentschel, Ralf Richter | 2019-07-02 |
| 10049917 | FDSOI channel control by implanted high-K buried oxide | Philipp Steinmann | 2018-08-14 |
| 9876111 | Method of forming a semiconductor device structure using differing spacer widths and the resulting semiconductor device structure | Steffen Sichler, Juergen Faul, Sylvain Baudot, Thorsten Kammler | 2018-01-23 |
| 9484459 | Performance enhancement in transistors by providing an embedded strain-inducing semiconductor material on the basis of a seed layer | Stephan Kronholz, Gunda Beernink | 2016-11-01 |
| 9472642 | Method of forming a semiconductor device structure and such a semiconductor device structure | Jan Hoentschel, Stefan Flachowsky, Ralf Richter | 2016-10-18 |
| 9412848 | Methods of forming a complex GAA FET device at advanced technology nodes | Ralf Richter, Jan Hoentschel, Stefan Flachowsky | 2016-08-09 |
| 9412859 | Contact geometry having a gate silicon length decoupled from a transistor length | Ralf Richter, Jan Hoentschel, Stefan Flachowsky | 2016-08-09 |
| 9406565 | Methods for fabricating integrated circuits with semiconductor substrate protection | Ralf Richter, Jan Hoentschel | 2016-08-02 |
| 9401423 | Enhancing transistor performance and reliability by incorporating deuterium into a strained capping layer | Stefan Flachowsky | 2016-07-26 |
| 9391176 | Multi-gate FETs having corrugated semiconductor stacks and method of forming the same | Stefan Flachowsky, Jan Hoentschel, Ralf Richter | 2016-07-12 |
| 9373720 | Three-dimensional transistor with improved channel mobility | Stefan Flachowsky, Jan Hoentschel, Ralf Richter | 2016-06-21 |
| 9373509 | FINFET doping method with curvilnear trajectory implantation beam path | Ralf Richter, Stefan Flachowsky, Jan Hoentschel | 2016-06-21 |
| 9349734 | Selective FuSi gate formation in gate first CMOS technologies | Stefan Flachowsky, Gerd Zschätzsch | 2016-05-24 |
| 9343374 | Efficient main spacer pull back process for advanced VLSI CMOS technologies | Jan Hoentschel, Stefan Flachowsky, Ralf Richter | 2016-05-17 |
| 9224863 | Performance enhancement in transistors by providing an embedded strain-inducing semiconductor material on the basis of a seed layer | Stephan Kronholz, Gunda Beernink | 2015-12-29 |
| 9224655 | Methods of removing gate cap layers in CMOS applications | Ralf Richter, Stefan Flachowsky, Jan Hoentschel | 2015-12-29 |
| 9177803 | HK/MG process flows for P-type semiconductor devices | Juergen Faul, Ralf Richter, Jan Hoentschel | 2015-11-03 |
| 9129843 | Integrated inductor | Stefan Flachowsky, Ralf Richter, Jan Hoentschel | 2015-09-08 |
| 9093526 | Methods of forming a sidewall spacer having a generally triangular shape and a semiconductor device having such a spacer | Juergen Faul, Bastian Haussdoerfer | 2015-07-28 |
| 9082876 | Integrated circuits and methods for fabricating integrated circuits with gate electrode structure protection | Ralf Richter, Stefan Flachowsky | 2015-07-14 |
| 9076818 | Semiconductor device fabrication methods | Andreas Kurz, Sergej Mutas, Clemens Wündisch | 2015-07-07 |
| 9054044 | Method for forming a semiconductor device and semiconductor device structures | Stefan Flachowsky, Jan Hoentschel, Ralf Richter | 2015-06-09 |