JH

Jan Höntschel

Globalfoundries: 3 patents #1,029 of 4,424Top 25%
GU Globalfoundries U.S.: 2 patents #206 of 665Top 35%
📍 Dresden, DE: #475 of 3,254 inventorsTop 15%
Overall (All Time): #912,252 of 4,157,543Top 25%
5
Patents All Time

Issued Patents All Time

Showing 1–5 of 5 patents

Patent #TitleCo-InventorsDate
12328926 Structures for a field-effect transistor that include a spacer structure Dominik Martin Kleimaier, Ruchil Kumar Jain, Peter Javorka, Steven Langdon, Felix Holzmüller 2025-06-10
11217678 Differential SG/EG spacer integration with equivalent NFET/PFET spacer widths and dual raised source drain expitaxial silicon and triple-nitride spacer integration enabling high-voltage EG device on FDSOI George R. Mulfinger, Ryan Sporer, Rick Carter, Peter Baars, Hans-Jürgen Thees 2022-01-04
10522655 Differential SG/EG spacer integration with equivalent NFET/PFET spacer widths and dial raised source drain expitaxial silicon and triple-nitride spacer integration enabling high-voltage EG device on FDSOI George R. Mulfinger, Ryan Sporer, Rick Carter, Peter Baars, Hans-Jürgen Thees 2019-12-31
10386406 Back gate tuning circuits Michael Otto, Maximilian Jüttner 2019-08-20
9806170 Differential SG/EG spacer integration with equivalent NFET/PFET spacer widths and dual raised source drain expitaxial silicon and triple-nitride spacer integration enabling high-voltage EG device on FDSOI George R. Mulfinger, Ryan Sporer, Rick Carter, Peter Baars, Hans-Jürgen Thees 2017-10-31