HT

Hans-Jürgen Thees

Globalfoundries: 5 patents #673 of 4,424Top 20%
GU Globalfoundries U.S.: 1 patents #344 of 665Top 55%
📍 Dresden, DE: #397 of 3,254 inventorsTop 15%
Overall (All Time): #813,187 of 4,157,543Top 20%
6
Patents All Time

Issued Patents All Time

Showing 1–6 of 6 patents

Patent #TitleCo-InventorsDate
11217678 Differential SG/EG spacer integration with equivalent NFET/PFET spacer widths and dual raised source drain expitaxial silicon and triple-nitride spacer integration enabling high-voltage EG device on FDSOI George R. Mulfinger, Ryan Sporer, Rick Carter, Peter Baars, Jan Höntschel 2022-01-04
10522655 Differential SG/EG spacer integration with equivalent NFET/PFET spacer widths and dial raised source drain expitaxial silicon and triple-nitride spacer integration enabling high-voltage EG device on FDSOI George R. Mulfinger, Ryan Sporer, Rick Carter, Peter Baars, Jan Höntschel 2019-12-31
10418364 Semiconductor device structure with self-aligned capacitor device Peter Baars 2019-09-17
9806170 Differential SG/EG spacer integration with equivalent NFET/PFET spacer widths and dual raised source drain expitaxial silicon and triple-nitride spacer integration enabling high-voltage EG device on FDSOI George R. Mulfinger, Ryan Sporer, Rick Carter, Peter Baars, Jan Höntschel 2017-10-31
9324868 Epitaxial growth of silicon for FinFETS with non-rectangular cross-sections Ran Yan, Ralf Richter, Jan Hoentschel 2016-04-26
8906801 Processes for forming integrated circuits and integrated circuits formed thereby Ralf Richter 2014-12-09