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Memory device structure |
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FinFET device with enlarged channel regions |
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2018-11-20 |
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2018-04-10 |
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Alban Zaka, El Mehdi Bazizi, Jan Hoentschel |
2018-01-30 |
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FinFET device with enlarged channel regions |
Ming-Cheng Chang, Bo Bai |
2017-08-29 |
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Method of forming a semiconductor device with STI structures on an SOI substrate |
Alban Zaka, Pei-Yu Chou |
2017-08-22 |
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Nicolas Sassiat, Kun-Hsien Lin, Jan Hoentschel |
2017-04-11 |
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Method of forming a memory device structure and memory device structure |
Ralf Richter, Yu-Teh Chiang |
2017-04-04 |
| 9466717 |
Complex semiconductor devices of the SOI type |
Alban Zaka, Jan Hoentschel |
2016-10-11 |
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Integrated circuits with shallow trench isolations, and methods for producing the same |
Nicolas Sassiat, Alban Zaka, Kun-Hsien Lin |
2016-10-04 |
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OPC enlarged dummy electrode to eliminate ski slope at eSiGe |
Jan Hoentschel, Martin Gerhardt |
2016-10-04 |
| 9324869 |
Method of forming a semiconductor device and resulting semiconductor devices |
Alban Zaka, Jan Hoentschel |
2016-04-26 |
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Epitaxial growth of silicon for FinFETS with non-rectangular cross-sections |
Ralf Richter, Jan Hoentschel, Hans-Jürgen Thees |
2016-04-26 |
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Methods for fabricating integrated circuits with improved implantation processes |
Alban Zaka, El Mehdi Bazizi, Jan Hoentschel |
2016-04-12 |
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Method of forming a semiconductor device structure employing fluorine doping and according semiconductor device structure |
Alban Zaka, Nicolas Sassiat, El Mehdi Bazizi, Jan Hoentschel |
2016-02-16 |
| 9190516 |
Method for a uniform compressive strain layer and device thereof |
Stefan Flachowsky, Alban Zaka, Jan Hoentschel |
2015-11-17 |
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Gate oxide quality for complex MOSFET devices |
Nicolas Sassiat, Jan Hoentschel, Torben Balzer |
2015-09-15 |
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Channel semiconductor alloy layer growth adjusted by impurity ion implantation |
Joerg Schoenekess, Jan Hoentschel |
2015-07-21 |
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Integrated circuits and methods for fabricating integrated circuits with improved silicide contacts |
Jan Hoentschel, Stefan Flachowsky, Nicolas Sassiat |
2015-05-12 |
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Methods for fabricating integrated circuits with the implantation of fluorine |
Nicolas Sassiat, Shiang Yang Ong, Torben Balzer |
2015-04-07 |
| 8951877 |
Transistor with embedded strain-inducing material formed in cavities based on an amorphization process and a heat treatment |
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2015-02-10 |
| 8916430 |
Methods for fabricating integrated circuits with the implantation of nitrogen |
Jan Hoentschel, Shiang Yang Ong |
2014-12-23 |
| 8399612 |
Asymmetric synthesis of peptides |
Laurence M. Harwood |
2013-03-19 |
| 8093405 |
Formation of 18F and 19F fluoroarenes bearing reactive functionalities |
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2012-01-10 |
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Asymmetric synthesis of peptides |
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2011-10-25 |
