Issued Patents All Time
Showing 1–25 of 25 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 10600843 | Memory device structure | Ralf Richter, Yu-Teh Chiang | 2020-03-24 |
| 10134730 | FinFET device with enlarged channel regions | Ming-Cheng Chang, Bo Bai | 2018-11-20 |
| 9941348 | Method of forming a capacitor structure and capacitor structure | Ming-Cheng Chang, Ralf Richter | 2018-04-10 |
| 9881841 | Methods for fabricating integrated circuits with improved implantation processes | Alban Zaka, El Mehdi Bazizi, Jan Hoentschel | 2018-01-30 |
| 9748236 | FinFET device with enlarged channel regions | Ming-Cheng Chang, Bo Bai | 2017-08-29 |
| 9741625 | Method of forming a semiconductor device with STI structures on an SOI substrate | Alban Zaka, Pei-Yu Chou | 2017-08-22 |
| 9620589 | Integrated circuits and methods of fabrication thereof | Nicolas Sassiat, Kun-Hsien Lin, Jan Hoentschel | 2017-04-11 |
| 9614003 | Method of forming a memory device structure and memory device structure | Ralf Richter, Yu-Teh Chiang | 2017-04-04 |
| 9466717 | Complex semiconductor devices of the SOI type | Alban Zaka, Jan Hoentschel | 2016-10-11 |
| 9460955 | Integrated circuits with shallow trench isolations, and methods for producing the same | Nicolas Sassiat, Alban Zaka, Kun-Hsien Lin | 2016-10-04 |
| 9461145 | OPC enlarged dummy electrode to eliminate ski slope at eSiGe | Jan Hoentschel, Martin Gerhardt | 2016-10-04 |
| 9324869 | Method of forming a semiconductor device and resulting semiconductor devices | Alban Zaka, Jan Hoentschel | 2016-04-26 |
| 9324868 | Epitaxial growth of silicon for FinFETS with non-rectangular cross-sections | Ralf Richter, Jan Hoentschel, Hans-Jürgen Thees | 2016-04-26 |
| 9312189 | Methods for fabricating integrated circuits with improved implantation processes | Alban Zaka, El Mehdi Bazizi, Jan Hoentschel | 2016-04-12 |
| 9263270 | Method of forming a semiconductor device structure employing fluorine doping and according semiconductor device structure | Alban Zaka, Nicolas Sassiat, El Mehdi Bazizi, Jan Hoentschel | 2016-02-16 |
| 9190516 | Method for a uniform compressive strain layer and device thereof | Stefan Flachowsky, Alban Zaka, Jan Hoentschel | 2015-11-17 |
| 9136266 | Gate oxide quality for complex MOSFET devices | Nicolas Sassiat, Jan Hoentschel, Torben Balzer | 2015-09-15 |
| 9087716 | Channel semiconductor alloy layer growth adjusted by impurity ion implantation | Joerg Schoenekess, Jan Hoentschel | 2015-07-21 |
| 9029214 | Integrated circuits and methods for fabricating integrated circuits with improved silicide contacts | Jan Hoentschel, Stefan Flachowsky, Nicolas Sassiat | 2015-05-12 |
| 8999803 | Methods for fabricating integrated circuits with the implantation of fluorine | Nicolas Sassiat, Shiang Yang Ong, Torben Balzer | 2015-04-07 |
| 8951877 | Transistor with embedded strain-inducing material formed in cavities based on an amorphization process and a heat treatment | Nicolas Sassiat, Carsten Grass, Jan Hoentschel, Ralf Richter | 2015-02-10 |
| 8916430 | Methods for fabricating integrated circuits with the implantation of nitrogen | Jan Hoentschel, Shiang Yang Ong | 2014-12-23 |
| 8399612 | Asymmetric synthesis of peptides | Laurence M. Harwood | 2013-03-19 |
| 8093405 | Formation of 18F and 19F fluoroarenes bearing reactive functionalities | Michael Andrew Carroll | 2012-01-10 |
| 8044173 | Asymmetric synthesis of peptides | Laurence M. Harwood | 2011-10-25 |