| 11705455 |
High voltage extended drain MOSFET (EDMOS) devices in a high-k metal gate (HKMG) |
Peter Baars |
2023-07-18 |
$54,297,000 |
| 11289598 |
Co-integrated high voltage (HV) and medium voltage (MV) field effect transistors |
Nan Wu, Peter Baars |
2022-03-29 |
|
| 10141229 |
Process for forming semiconductor layers of different thickness in FDSOI technologies |
Jurgen Faul |
2018-11-27 |
$55,245,000 |
| 9876111 |
Method of forming a semiconductor device structure using differing spacer widths and the resulting semiconductor device structure |
Steffen Sichler, Peter Javorka, Juergen Faul, Sylvain Baudot |
2018-01-23 |
$14,858,000 |
| 9514942 |
Method of forming a gate mask for fabricating a structure of gate lines |
Elliot John Smith, Andreas Hellmich, Carsten Grass |
2016-12-06 |
$17,587,000 |
| 9466685 |
Semiconductor structure including at least one electrically conductive pillar, semiconductor structure including a contact contacting an outer layer of an electrically conductive structure and method for the formation thereof |
Hans-Peter Moll, Peter Baars |
2016-10-11 |
$4,519,000 |
| 9450073 |
SOI transistor having drain and source regions of reduced length and a stressed dielectric material adjacent thereto |
Andy Wei, Roman Boschke, Casey Scott |
2016-09-20 |
$5,529,000 |
| 8906811 |
Shallow pn junction formed by in situ doping during selective growth of an embedded semiconductor alloy by a cyclic growth/etch deposition process |
Andy Wei, Ina Ostermay |
2014-12-09 |
$981,000 |
| 8779529 |
Self-aligned silicidation for replacement gate process |
Indradeep Sen, Andreas Knorr, Akif Sultan |
2014-07-15 |
$3,357,000 |
| 8674416 |
Semiconductor device with reduced threshold variability having a threshold adjusting semiconductor alloy in the device active region |
Carsten Reichel, Annekathrin Zeun, Stephan Kronholz |
2014-03-18 |
$1,595,000 |
| 8652913 |
Method for forming silicon/germanium containing drain/source regions in transistors with reduced silicon/germanium loss |
Andreas Gehring, Maciej Wiatr, Andy Wei, Roman Boschke, Casey Scott |
2014-02-18 |
$2,174,000 |
| 8569143 |
Methods of fabricating a semiconductor IC having a hardened shallow trench isolation (STI) |
Joerg Radecker, Christof Streck |
2013-10-29 |
$3,801,000 |
| 8518784 |
Adjusting of strain caused in a transistor channel by semiconductor material provided for threshold adjustment |
Stephan Kronholz, Gunda Beernink, Carsten Reichel |
2013-08-27 |
$3,330,000 |
| 8481404 |
Leakage control in field effect transistors based on an implantation species introduced locally at the STI edge |
Maciej Wiatr, Roman Boschke, Peter Javorka |
2013-07-09 |
$5,244,000 |
| 8440516 |
Method of forming a field effect transistor |
Andy Wei, Jan Hoentschel, Manfred Horstmann |
2013-05-14 |
$3,052,000 |
| 8361870 |
Self-aligned silicidation for replacement gate process |
Indradeep Sen, Andreas Knorr, Akif Sultan |
2013-01-29 |
$4,433,000 |
| 8324119 |
Enhancing deposition uniformity of a channel semiconductor alloy by an in situ etch process |
Carsten Reichel, Annekathrin Zeun, Stephan Kronholz |
2012-12-04 |
$1,677,000 |
| 8293596 |
Formation of a channel semiconductor alloy by depositing a hard mask for the selective epitaxial growth |
Stephan Kronholz, Carsten Reichel, Annekathrin Zeun |
2012-10-23 |
$1,510,000 |
| 8274120 |
Technique for providing stress sources in transistors in close proximity to a channel region by recessing drain and source regions |
Andy Wei, Jan Hoentschel, Manfred Horstmann, Peter Javorka, Joe Bloomquist |
2012-09-25 |
$4,174,000 |
| 8198166 |
Using high-k dielectrics as highly selective etch stop materials in semiconductor devices |
Ralf Richter, Markus Lenski, Gunter Grasshoff |
2012-06-12 |
$4,410,000 |
| 8119461 |
Reducing the creation of charge traps at gate dielectrics in MOS transistors by performing a hydrogen treatment |
Martin Trentzsch, Rolf Stephan |
2012-02-21 |
$8,175,000 |
| 8114746 |
Method for forming double gate and tri-gate transistors on a bulk substrate |
Andy Wei, Robert Neil Mulfinger, Thilo Scheiper |
2012-02-14 |
$17,426,000 |
| 8053273 |
Shallow PN junction formed by in situ doping during selective growth of an embedded semiconductor alloy by a cyclic growth/etch deposition process |
Andy Wei, Ina Ostermay |
2011-11-08 |
$4,445,000 |
| 8039878 |
Transistor having a channel with tensile strain and oriented along a crystallographic orientation with increased charge carrier mobility |
Igor Peidous, Andy Wei |
2011-10-18 |
$1,986,000 |
| 7843015 |
Multi-silicide system in integrated circuit technology |
Robert J. Chiu, Paul R. Besser, Simon S. Chan, Jeffrey P. Patton, Austin Frenkel +1 more |
2010-11-30 |
$11,033,000 |
