Issued Patents All Time
Showing 1–23 of 23 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 9443723 | Integrated circuits with an insultating layer and methods for producing such integrated circuits | Ronny Pfutzner, Andreia Ioana Popa | 2016-09-13 |
| 8772178 | Technique for forming a dielectric interlayer above a structure including closely spaced lines | Hartmut Ruelke, Kai Frohberg | 2014-07-08 |
| 8741787 | Increased density of low-K dielectric materials in semiconductor devices by applying a UV treatment | Ulrich Mayer, Hartmut Ruelke | 2014-06-03 |
| 8609555 | Increased stability of a complex material stack in a semiconductor device by providing fluorine enriched interfaces | Hartmut Ruelke, Heinz-Juergen Voss | 2013-12-17 |
| 8569143 | Methods of fabricating a semiconductor IC having a hardened shallow trench isolation (STI) | Thorsten Kammler, Joerg Radecker | 2013-10-29 |
| 8432035 | Metal cap layer with enhanced etch resistivity for copper-based metal regions in semiconductor devices | Volker Kahlert | 2013-04-30 |
| 8384217 | Increasing reliability of copper-based metallization structures in a microstructure device by using aluminum nitride | Volker Kahlert | 2013-02-26 |
| 8222135 | Increasing reliability of copper-based metallization structures in a microstructure device by using aluminum nitride | Volker Kahlert | 2012-07-17 |
| 8124532 | Semiconductor device comprising a copper alloy as a barrier layer in a copper metallization layer | Volker Kahlert, Alexander Hanke | 2012-02-28 |
| 8105943 | Enhancing structural integrity and defining critical dimensions of metallization systems of semiconductor devices by using ALD techniques | Volker Kahlert, John A. Iacoponi | 2012-01-31 |
| 8084354 | Method of fabricating a metal cap layer with enhanced etch resistivity for copper-based metal regions in semiconductor devices | Volker Kahlert | 2011-12-27 |
| 7829460 | Method of manufracturing increasing reliability of copper-based metallization structures in a microstructure device by using aluminum nitride | Volker Kahlert | 2010-11-09 |
| 7687398 | Technique for forming nickel silicide by depositing nickel from a gaseous precursor | Volker Kahlert, Alexander Hanke | 2010-03-30 |
| 7638428 | Semiconductor structure and method of forming the same | Volker Kahlert | 2009-12-29 |
| 7595269 | Semiconductor device comprising a copper alloy as a barrier layer in a copper metallization layer | Volker Kahlert, Alexander Hanke | 2009-09-29 |
| 7544551 | Technique for strain engineering in Si-based Transistors by using embedded semiconductor layers including atoms with high covalent radius | Volker Kahlert, Alexander Hanke | 2009-06-09 |
| 7413985 | Method for forming a self-aligned nitrogen-containing copper silicide capping layer in a microstructure device | Volker Kahlert | 2008-08-19 |
| 7384877 | Technique for reducing silicide defects by reducing deleterious effects of particle bombardment prior to silicidation | Volker Kahlert, Patrick Press | 2008-06-10 |
| 7307026 | Method of forming an epitaxial layer for raised drain and source regions by removing contaminations | Guido Koerner, Thorsten Kammler | 2007-12-11 |
| 6927161 | Low-k dielectric layer stack including an etch indicator layer for use in the dual damascene technique | Hartmut Ruelke, Georg Sulzer | 2005-08-09 |
| 6746927 | Semiconductor device having a polysilicon line structure with increased metal silicide portions and method for forming the polysilicon line structure of a semiconductor device | Thorsten Kammler, Karsten Wieczorek | 2004-06-08 |
| 6317642 | Apparatus and methods for uniform scan dispensing of spin-on materials | Lu You, Dawn Hopper, John G. Pellerin, Richard J. Huang | 2001-11-13 |
| 6066574 | Hot plate cure process for BCB low k interlevel dielectric | Lu You, Dawn Hopper | 2000-05-23 |