| 9828767 |
Prefabricated lightweight steel wall tensioning system |
John Lanzilotta |
2017-11-28 |
|
| 9477619 |
Programmable latency count to achieve higher memory bandwidth |
Qamrul Hasan, Clifford Alan Zitlaw |
2016-10-25 |
|
| 7977797 |
Integrated circuit with contact region and multiple etch stop insulation layer |
Wenmei Li, Angela T. Hui, Kouros Ghandehari |
2011-07-12 |
$1,106,000 |
| 7572727 |
Semiconductor formation method that utilizes multiple etch stop layers |
Wenmei Li, Angela T. Hui, Kouros Ghandehari |
2009-08-11 |
|
| 7361587 |
Semiconductor contact and nitride spacer formation system and method |
Wenmei Li, Angela T. Hui, Kouros Ghandehari |
2008-04-22 |
$2,177,000 |
| 7297592 |
Semiconductor memory with data retention liner |
Minh Van Ngo, Arvind Halliyal, Tazrien Kamal, Hidehiko Shiraiwa, Rinji Sugino +1 more |
2007-11-20 |
$6,431,000 |
| 7118967 |
Protection of charge trapping dielectric flash memory devices from UV-induced charging in BEOL processing |
Minh Van Ngo, Ning Cheng, Jeff P. Erhardt, Clarence B. Ferguson, Cyrus E. Tabery +2 more |
2006-10-10 |
$5,547,000 |
| 7070911 |
Structure and method for reducing standing waves in a photoresist |
Kouros Ghandehari, Minh Van Ngo |
2006-07-04 |
|
| 7071562 |
Interconnects with improved barrier layer adhesion |
Minh Van Ngo |
2006-07-04 |
|
| 7005387 |
Method for preventing an increase in contact hole width during contact formation |
Hiroyuki Kinoshita, Christy Mei-Chu Woo |
2006-02-28 |
$11,043,000 |
| 6969654 |
Flash NVROM devices with UV charge immunity |
Tuan Pham, Mark T. Ramsbey, Jeffrey A. Shields, Angela T. Hui |
2005-11-29 |
$10,680,000 |
| 6900121 |
Laser thermal annealing to eliminate oxide voiding |
Minh Van Ngo, Arvind Halliyal |
2005-05-31 |
$6,268,000 |
| 6867063 |
Organic spin-on anti-reflective coating over inorganic anti-reflective coating |
Kouros Ghandehari, Wenmei Li, Angela T. Hui |
2005-03-15 |
$4,259,000 |
| 6809402 |
Reflowable-doped HDP film |
Minh Van Ngo, Atul Gupta, Tyagamohan Gottipati, John Caffall |
2004-10-26 |
$3,793,000 |
| 6806165 |
Isolation trench fill process |
Minh Van Ngo, Mark S. Chang |
2004-10-19 |
$2,591,000 |
| 6803265 |
Liner for semiconductor memories and manufacturing method therefor |
Minh Van Ngo, Arvind Halliyal, Tazrien Kamal, Hidehiko Shiraiwa, Rinji Sugino +1 more |
2004-10-12 |
|
| 6784095 |
Phosphine treatment of low dielectric constant materials in semiconductor device manufacturing |
Suzette K. Pangrle, Minh Van Ngo, Lu You |
2004-08-31 |
$2,273,000 |
| 6756672 |
Use of sic for preventing copper contamination of low-k dielectric layers |
Lu You, Suzette K. Pangrle |
2004-06-29 |
$3,195,000 |
| 6723634 |
Method of forming interconnects with improved barrier layer adhesion |
Minh Van Ngo |
2004-04-20 |
$2,632,000 |
| 6713874 |
Semiconductor devices with dual nature capping/arc layers on organic-doped silica glass inter-layer dielectrics |
Lu You, Minh Van Ngo |
2004-03-30 |
$4,272,000 |
| 6686232 |
Ultra low deposition rate PECVD silicon nitride |
Minh Van Ngo, Robert A. Huertas, Hieu Pham |
2004-02-03 |
$4,862,000 |
| 6677679 |
Use of SiO2/Sin for preventing copper contamination of low-k dielectric layers |
Lu You, Fei Wang |
2004-01-13 |
$5,601,000 |
| 6656830 |
Dual damascene with silicon carbide middle etch stop layer/ARC |
Ramkumar Subramanian, Fei Wang, Lynne A. Okada |
2003-12-02 |
$4,088,000 |
| 6653190 |
Flash memory with controlled wordline width |
Jean Y. Yang, Kouros Ghandehari, Tazrien Kamal, Minh Van Ngo, Mark T. Ramsbey +2 more |
2003-11-25 |
$4,814,000 |
| 6645853 |
Interconnects with improved barrier layer adhesion |
Minh Van Ngo |
2003-11-11 |
$4,427,000 |
