Issued Patents All Time
Showing 25 most recent of 32 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 9018037 | Vertical oxide-oxide interface for forming-free, low power and low variability RRAM devices | Federico Nardi, Randall J. Higuchi, Yun Wang | 2015-04-28 |
| 8791445 | Interfacial oxide used as switching layer in a nonvolatile resistive memory element | Randall J. Higuchi, Tony P. Chiang, Ryan Clarke, Vidyut Gopal, Imran Hashim +1 more | 2014-07-29 |
| 8415256 | Gap-filling with uniform properties | Alexander H. Nickel, Lu You, Hirokazu Tokuno, Minh Quoc Tran, Minh Van Ngo +2 more | 2013-04-09 |
| 8026169 | Cu annealing for improved data retention in flash memory devices | Lu You, Alexander H. Nickel, Minh Quoc Tran, Minh Van Ngo, Hieu Pham +4 more | 2011-09-27 |
| 7884030 | Gap-filling with uniform properties | Alexander H. Nickel, Lu You, Hirokazu Tokuno, Minh Quoc Tran, Minh Van Ngo +2 more | 2011-02-08 |
| 7534732 | Semiconductor devices with copper interconnects and composite silicon nitride capping layers | Minh Van Ngo, Erik Wilson, Hieu Pham, Lu You, Hirokazu Tokuno +2 more | 2009-05-19 |
| 7300886 | Interlayer dielectric for charge loss improvement | Minh Van Ngo, Ning Cheng, Wenmei Li, Angela T. Hui, Pei-Yuan Gao | 2007-11-27 |
| 7023046 | Undoped oxide liner/BPSG for improved data retention | Minh Van Ngo, Angela T. Hui, Ning Cheng, Jeyong Park, Jean Y. Yang +3 more | 2006-04-04 |
| 7018896 | UV-blocking layer for reducing UV-induced charging of SONOS dual-bit flash memory devices in BEOL processing | Minh Van Ngo, Tazrien Kamal, Mark T. Ramsbey, Arvind Halliyal, Jaeyong Park +6 more | 2006-03-28 |
| 6875694 | Method of treating inlaid copper for improved capping layer adhesion without damaging porous low-k materials | Minh Van Ngo, Hieu Pham | 2005-04-05 |
| 6818557 | Method of forming SiC capped copper interconnects with reduced hillock formation and improved electromigration resistance | Minh Van Ngo, Christine Hau-Riege, Steve Avanzino | 2004-11-16 |
| 6809043 | Multi-stage, low deposition rate PECVD oxide | Minh Van Ngo, Hieu Pham | 2004-10-26 |
| 6774432 | UV-blocking layer for reducing UV-induced charging of SONOS dual-bit flash memory devices in BEOL | Minh Van Ngo, Tazrien Kamal, Mark T. Ramsbey, Arvind Halliyal, Jaeyong Park +6 more | 2004-08-10 |
| 6686232 | Ultra low deposition rate PECVD silicon nitride | Minh Van Ngo, Dawn Hopper, Hieu Pham | 2004-02-03 |
| 6661067 | Nitrogen-plasma treatment for reduced nickel silicide bridging | Minh Van Ngo, Christy Mei-Chu Woo, Paul R. Besser | 2003-12-09 |
| 6627973 | Void-free interlayer dielectric (ILD0) for 0.18-micron flash memory semiconductor device | Minh Van Ngo, Lu You, King Wai Kelwin Ko, Pei-Yuan Gao | 2003-09-30 |
| 6596631 | Method of forming copper interconnect capping layers with improved interface and adhesion | Minh Van Ngo, Hartmut Ruelke, Lothar Mergili, Joerg Hohage, Lu You +1 more | 2003-07-22 |
| 6562416 | Method of forming low resistance vias | Minh Van Ngo, Dawn Hopper | 2003-05-13 |
| 6528432 | H2-or H2/N2-plasma treatment to prevent organic ILD degradation | Minh Van Ngo, Dawn Hopper | 2003-03-04 |
| 6521529 | HDP treatment for reduced nickel silicide bridging | Minh Van Ngo, Christy Mei-Chu Woo, Ercan Adem | 2003-02-18 |
| 6489253 | Method of forming a void-free interlayer dielectric (ILD0) for 0.18-&mgr;m flash memory technology and semiconductor device thereby formed | Minh Van Ngo, Lu You, King Wai Kelwin Ko, Pei-Yuan Gao | 2002-12-03 |
| 6482755 | HDP deposition hillock suppression method in integrated circuits | Minh Van Ngo, Dawn Hopper | 2002-11-19 |
| 6465349 | Nitrogen-plasma treatment for reduced nickel silicide bridging | Minh Van Ngo, Christy Mei-Chu Woo, Paul R. Besser | 2002-10-15 |
| 6388330 | Low dielectric constant etch stop layers in integrated circuit interconnects | Minh Van Ngo, Dawn Hopper, Terri Jo Kitson | 2002-05-14 |
| 6383925 | Method of improving adhesion of capping layers to cooper interconnects | Minh Van Ngo, Lu You, Ercan Adem | 2002-05-07 |