| 9018037 |
Vertical oxide-oxide interface for forming-free, low power and low variability RRAM devices |
Federico Nardi, Randall J. Higuchi, Yun Wang |
2015-04-28 |
$189,000 |
| 8791445 |
Interfacial oxide used as switching layer in a nonvolatile resistive memory element |
Randall J. Higuchi, Tony P. Chiang, Ryan Clarke, Vidyut Gopal, Imran Hashim +1 more |
2014-07-29 |
$1,713,000 |
| 8415256 |
Gap-filling with uniform properties |
Alexander H. Nickel, Lu You, Hirokazu Tokuno, Minh Quoc Tran, Minh Van Ngo +2 more |
2013-04-09 |
|
| 8026169 |
Cu annealing for improved data retention in flash memory devices |
Lu You, Alexander H. Nickel, Minh Quoc Tran, Minh Van Ngo, Hieu Pham +4 more |
2011-09-27 |
$6,329,000 |
| 7884030 |
Gap-filling with uniform properties |
Alexander H. Nickel, Lu You, Hirokazu Tokuno, Minh Quoc Tran, Minh Van Ngo +2 more |
2011-02-08 |
|
| 7534732 |
Semiconductor devices with copper interconnects and composite silicon nitride capping layers |
Minh Van Ngo, Erik Wilson, Hieu Pham, Lu You, Hirokazu Tokuno +2 more |
2009-05-19 |
$8,842,000 |
| 7300886 |
Interlayer dielectric for charge loss improvement |
Minh Van Ngo, Ning Cheng, Wenmei Li, Angela T. Hui, Pei-Yuan Gao |
2007-11-27 |
|
| 7023046 |
Undoped oxide liner/BPSG for improved data retention |
Minh Van Ngo, Angela T. Hui, Ning Cheng, Jeyong Park, Jean Y. Yang +3 more |
2006-04-04 |
$14,413,000 |
| 7018896 |
UV-blocking layer for reducing UV-induced charging of SONOS dual-bit flash memory devices in BEOL processing |
Minh Van Ngo, Tazrien Kamal, Mark T. Ramsbey, Arvind Halliyal, Jaeyong Park +6 more |
2006-03-28 |
$11,294,000 |
| 6875694 |
Method of treating inlaid copper for improved capping layer adhesion without damaging porous low-k materials |
Minh Van Ngo, Hieu Pham |
2005-04-05 |
$7,987,000 |
| 6818557 |
Method of forming SiC capped copper interconnects with reduced hillock formation and improved electromigration resistance |
Minh Van Ngo, Christine Hau-Riege, Steve Avanzino |
2004-11-16 |
$6,082,000 |
| 6809043 |
Multi-stage, low deposition rate PECVD oxide |
Minh Van Ngo, Hieu Pham |
2004-10-26 |
$3,793,000 |
| 6774432 |
UV-blocking layer for reducing UV-induced charging of SONOS dual-bit flash memory devices in BEOL |
Minh Van Ngo, Tazrien Kamal, Mark T. Ramsbey, Arvind Halliyal, Jaeyong Park +6 more |
2004-08-10 |
$1,968,000 |
| 6686232 |
Ultra low deposition rate PECVD silicon nitride |
Minh Van Ngo, Dawn Hopper, Hieu Pham |
2004-02-03 |
$4,862,000 |
| 6661067 |
Nitrogen-plasma treatment for reduced nickel silicide bridging |
Minh Van Ngo, Christy Mei-Chu Woo, Paul R. Besser |
2003-12-09 |
$2,702,000 |
| 6627973 |
Void-free interlayer dielectric (ILD0) for 0.18-micron flash memory semiconductor device |
Minh Van Ngo, Lu You, King Wai Kelwin Ko, Pei-Yuan Gao |
2003-09-30 |
$4,535,000 |
| 6596631 |
Method of forming copper interconnect capping layers with improved interface and adhesion |
Minh Van Ngo, Hartmut Ruelke, Lothar Mergili, Joerg Hohage, Lu You +1 more |
2003-07-22 |
$3,195,000 |
| 6562416 |
Method of forming low resistance vias |
Minh Van Ngo, Dawn Hopper |
2003-05-13 |
$1,759,000 |
| 6528432 |
H2-or H2/N2-plasma treatment to prevent organic ILD degradation |
Minh Van Ngo, Dawn Hopper |
2003-03-04 |
$1,276,000 |
| 6521529 |
HDP treatment for reduced nickel silicide bridging |
Minh Van Ngo, Christy Mei-Chu Woo, Ercan Adem |
2003-02-18 |
$2,713,000 |
| 6489253 |
Method of forming a void-free interlayer dielectric (ILD0) for 0.18-&mgr;m flash memory technology and semiconductor device thereby formed |
Minh Van Ngo, Lu You, King Wai Kelwin Ko, Pei-Yuan Gao |
2002-12-03 |
$4,258,000 |
| 6482755 |
HDP deposition hillock suppression method in integrated circuits |
Minh Van Ngo, Dawn Hopper |
2002-11-19 |
$1,532,000 |
| 6465349 |
Nitrogen-plasma treatment for reduced nickel silicide bridging |
Minh Van Ngo, Christy Mei-Chu Woo, Paul R. Besser |
2002-10-15 |
$861,000 |
| 6388330 |
Low dielectric constant etch stop layers in integrated circuit interconnects |
Minh Van Ngo, Dawn Hopper, Terri Jo Kitson |
2002-05-14 |
$2,737,000 |
| 6383880 |
NH3/N2-plasma treatment for reduced nickel silicide bridging |
Minh Van Ngo, Christy Mei-Chu Woo |
2002-05-07 |
$2,110,000 |
