| 8507969 |
Method and system for providing contact to a first polysilicon layer in a flash memory device |
Mark S. Chang, Hao Fang |
2013-08-13 |
| 8329530 |
Method and system for providing contact to a first polysilicon layer in a flash memory device |
Mark S. Chang, Hao Fang |
2012-12-11 |
| 8183619 |
Method and system for providing contact to a first polysilicon layer in a flash memory device |
Mark S. Chang, Hao Fang |
2012-05-22 |
| 7226839 |
Method and system for improving the topography of a memory array |
Hiroyuki Kinoshita, Hiroyuki Ogawa, Yu Sun |
2007-06-05 |
| 6627973 |
Void-free interlayer dielectric (ILD0) for 0.18-micron flash memory semiconductor device |
Minh Van Ngo, Robert A. Huertas, Lu You, Pei-Yuan Gao |
2003-09-30 |
| 6603211 |
Method and system for providing a robust alignment mark at thin oxide layers |
Michael K. Templeton, Hao Fang, Maria C. Chan |
2003-08-05 |
| 6489253 |
Method of forming a void-free interlayer dielectric (ILD0) for 0.18-&mgr;m flash memory technology and semiconductor device thereby formed |
Minh Van Ngo, Robert A. Huertas, Lu You, Pei-Yuan Gao |
2002-12-03 |
| 6472327 |
Method and system for etching tunnel oxide to reduce undercutting during memory array fabrication |
Mark S. Chang, Hao Fang |
2002-10-29 |
| 6448594 |
Method and system for processing a semiconductor device |
Maria C. Chan, Hao Fang, Lu You, Mark S. Chang |
2002-09-10 |
| 6445051 |
Method and system for providing contacts with greater tolerance for misalignment in a flash memory |
Mark S. Chang, Hao Fang, John Jianshi Wang, Michael K. Templeton, Lu You +1 more |
2002-09-03 |
| 6333263 |
Method of reducing stress corrosion induced voiding of patterned metal layers |
Minh Van Ngo, Simon S. Chan, Anne E. Sanderfer |
2001-12-25 |
| 6251776 |
Plasma treatment to reduce stress corrosion induced voiding of patterned metal layers |
Minh Van Ngo, Simon S. Chan, Anne E. Sanderfer |
2001-06-26 |
| 6130169 |
Efficient in-situ resist strip process for heavy polymer metal etch |
Jeffrey A. Shields, Leobardo Mercado |
2000-10-10 |