Issued Patents All Time
Showing 25 most recent of 244 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 12426354 | Field effect transistors with reduced gate fringe area and method of making the same | Takahito Fujita, Kiyokazu Shishido | 2025-09-23 |
| 12424602 | Bonded assembly containing conductive via structures extending through word lines in a staircase region and methods for making the same | Masanori Tsutsumi, Mitsuteru Mushiga | 2025-09-23 |
| 12402311 | Three-dimensional memory device containing memory opening monitoring area and methods of making the same | Masato Miyamoto, Keisuke SHIGEMURA | 2025-08-26 |
| 12387789 | X-direction divided sub-block mode in NAND | Naohiro Hosoda | 2025-08-12 |
| 12284807 | Three-dimensional memory device with separated contact regions | Hardwell Chibvongodze, Zhixin Cui, Rajdeep Gautam | 2025-04-22 |
| 12270853 | Semiconductor wafer configured for single touch-down testing | Toru Miwa, Takashi Murai, Nisha Padattil Kuliyampattil | 2025-04-08 |
| 12094944 | Transistor circuits including fringeless transistors and method of making the same | Dai Iwata, Hiroshi Nakatsuji, Eiichi Fujikura | 2024-09-17 |
| 12040198 | Inner wall and substrate processing apparatus | Yuji Asakawa, Atsushi Tanaka | 2024-07-16 |
| 12027520 | Transistor circuits including fringeless transistors and method of making the same | Akihiro Yuu, Dai Iwata | 2024-07-02 |
| 11996153 | Three-dimensional memory device with separated contact regions and methods for forming the same | James Kai, Yuki Mizutani, Hisakazu Otoi, Masaaki Higashitani | 2024-05-28 |
| 11991881 | Three-dimensional memory device with off-center or reverse slope staircase regions and methods for forming the same | Hiroyuki Tanaka | 2024-05-21 |
| 11925027 | Three-dimensional memory device including sense amplifiers having a common width and separation | Takuma Takimoto, Masayuki Hiroi, Masatoshi Okumura | 2024-03-05 |
| 11889684 | Three-dimensional memory device with separated source-side lines and method of making the same | Masanori Tsutsumi, Shinsuke Yada, Mitsuteru Mushiga, Akio Nishida, Teruo Okina | 2024-01-30 |
| 11889694 | Three-dimensional memory device with separated contact regions and methods for forming the same | Hardwell Chibvongodze, Zhixin Cui, Rajdeep Gautam | 2024-01-30 |
| 11876096 | Field effect transistors with reduced gate fringe area and method of making the same | Takahito Fujita, Kiyokazu Shishido | 2024-01-16 |
| 11837601 | Transistor circuits including fringeless transistors and method of making the same | Jun Akaiwa, Dai Iwata, Hiroshi Nakatsuji, Eiichi Fujikura | 2023-12-05 |
| 11792988 | Three-dimensional memory device with separated contact regions and methods for forming the same | Fumiaki Toyama | 2023-10-17 |
| 11710740 | Field effect transistors with reduced gate fringe area and method of making the same | Takahito Fujita, Kiyokazu Shishido | 2023-07-25 |
| 11626397 | Gate material-based capacitor and resistor structures and methods of forming the same | Hokuto KODATE, Dai Iwata, Mitsuhiro Togo | 2023-04-11 |
| 11501835 | Three-dimensional memory device and method of erasing thereof from a source side | Shinsuke Yada | 2022-11-15 |
| 11501821 | Three-dimensional memory device containing a shared word line driver across different tiers and methods for making the same | Ken Oowada, Mitsuteru Mushiga | 2022-11-15 |
| 11393836 | Three-dimensional memory device with separated source-side lines and method of making the same | Masanori Tsutsumi, Shinsuke Yada, Mitsuteru Mushiga, Akio Nishida, Teruo Okina | 2022-07-19 |
| 11328904 | Substrate processing apparatus | Shigeki Doba, Hajime Naito, Akitaka Shimizu, Tatsuo Matsudo | 2022-05-10 |
| 11322483 | Three-dimensional memory device containing a shared word line driver across different tiers and methods for making the same | Ken Oowada, Mitsuteru Mushiga | 2022-05-03 |
| 11322597 | Gate material-based capacitor and resistor structures and methods of forming the same | Hokuto KODATE, Dai Iwata, Mitsuhiro Togo | 2022-05-03 |