Issued Patents All Time
Showing 25 most recent of 48 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 12411608 | I/O modulation scheme for ultra-high data throughput with massive NAND parallelism | Alvin Joshua, Hardwell Chibvongodze | 2025-09-09 |
| 12347494 | On-chip performance throttling | Panni Wang, Xiaojia Jia, Swaroop Kaza | 2025-07-01 |
| 12310020 | Three-dimensional memory device including a dummy word line with tapered corner and method of making the same | Nobuyuki FUJIMURA, Shunsuke TAKUMA, Takashi Kudo, Satoshi Shimizu | 2025-05-20 |
| 12284807 | Three-dimensional memory device with separated contact regions | Hiroyuki Ogawa, Hardwell Chibvongodze, Rajdeep Gautam | 2025-04-22 |
| 12284759 | Display module and display device | Wen-Kuong Liu, Xu Lu, An FU, Qing Gong | 2025-04-22 |
| 12010835 | Three-dimensional memory device with a conductive drain-select-level spacer and methods for forming the same | Satoshi Shimizu | 2024-06-11 |
| 11889694 | Three-dimensional memory device with separated contact regions and methods for forming the same | Hardwell Chibvongodze, Rajdeep Gautam, Hiroyuki Ogawa | 2024-01-30 |
| 11877452 | Three-dimensional memory device including laterally-undulating memory material layers and methods for forming the same | Tatsuya Hinoue | 2024-01-16 |
| 11621277 | Multilevel memory stack structure with tapered inter-tier joint region and methods of making thereof | Monica Titus, Senaka Kanakamedala, Yao-Sheng Lee, Chih-Yu Lee | 2023-04-04 |
| 11600634 | Three-dimensional memory device including a composite semiconductor channel and a horizontal source contact layer and method of making the same | Satoshi Shimizu, Yanli Zhang | 2023-03-07 |
| 11552100 | Three-dimensional memory device including a composite semiconductor channel and a horizontal source contact layer and method of making the same | Satoshi Shimizu, Yanli Zhang | 2023-01-10 |
| 11515326 | Three-dimensional memory device including laterally-undulating memory material layers and methods for forming the same | Tatsuya Hinoue | 2022-11-29 |
| 11361816 | Memory block with separately driven source regions to improve performance | Rajdeep Gautam, Hardwell Chibvongodze | 2022-06-14 |
| 11355437 | Three-dimensional memory device including bump-containing bit lines and methods for manufacturing the same | Yukihiro Sakotsubo | 2022-06-07 |
| 11342245 | Through-stack contact via structures for a three-dimensional memory device and methods of forming the same | Hirofumi TOKITA | 2022-05-24 |
| 11335671 | Stacked die assembly including double-sided inter-die bonding connections and methods of forming the same | Hardwell Chibvongodze, Rajdeep Gautam | 2022-05-17 |
| 11302714 | Three-dimensional memory device including a composite semiconductor channel and a horizontal source contact layer and method of making the same | Satoshi Shimizu, Yanli Zhang | 2022-04-12 |
| 11244958 | Three-dimensional memory device including composite word lines and multi-strip select lines and method for making the same | Fei Zhou, Raghuveer S. Makala | 2022-02-08 |
| 11222954 | Three-dimensional memory device containing inter-select-gate electrodes and methods of making the same | Hardwell Chibvongodze, Masatoshi Nishikawa | 2022-01-11 |
| 11114462 | Three-dimensional memory device with composite charge storage structures and methods for forming the same | Ippei Yasuda | 2021-09-07 |
| 11094715 | Three-dimensional memory device including different height memory stack structures and methods of making the same | Masatoshi Nishikawa, Ken Oowada | 2021-08-17 |
| 11069410 | Three-dimensional NOR-NAND combination memory device and method of making the same | Hardwell Chibvongodze, Rajdeep Gautam | 2021-07-20 |
| 11069703 | Three-dimensional device with bonded structures including a support die and methods of making the same | Akio Nishida, Mitsuteru Mushiga | 2021-07-20 |
| 11049876 | Three-dimensional memory device containing through-memory-level contact via structures | Michimoto Kaminaga | 2021-06-29 |
| 11024635 | Three-dimensional flat NAND memory device having curved memory elements and methods of making the same | Masatoshi Nishikawa, Yanli Zhang | 2021-06-01 |