ST

Shunsuke TAKUMA

ST Sandisk Technologies: 10 patents #284 of 2,224Top 15%
KT Kabushiki Kaisha Toshiba: 1 patents #13,537 of 21,451Top 65%
📍 Yokkaichi, JP: #351 of 2,072 inventorsTop 20%
Overall (All Time): #436,371 of 4,157,543Top 15%
11
Patents All Time

Issued Patents All Time

Showing 1–11 of 11 patents

Patent #TitleCo-InventorsDate
12408345 Three-dimensional memory device with backside support pillar structures and methods of forming the same Yuji Totoki, Seiji Shimabukuro, Tatsuya Hinoue, Kengo Kajiwara, Akihiro Tobioka 2025-09-02
12349352 Three-dimensional memory device including a dummy word line with tapered corner and method of making the same Nobuyuki FUJIMURA, Takashi Kudo, Satoshi Shimizu 2025-07-01
12310020 Three-dimensional memory device including a dummy word line with tapered corner and method of making the same Nobuyuki FUJIMURA, Takashi Kudo, Satoshi Shimizu, Zhixin Cui 2025-05-20
11844222 Three-dimensional memory device with backside support pillar structures and methods of forming the same Yuji Totoki, Seiji Shimabukuro, Tatsuya Hinoue, Kengo Kajiwara, Akihiro Tobioka 2023-12-12
11792986 Dual sacrificial material replacement process for a three-dimensional memory device and structure formed by the same Keigo Kitazawa, Naoto Norizuki 2023-10-17
11749554 Multi-wafer deposition tool for reducing residual deposition on transfer blades and methods of operating the same Makoto Tsutsue 2023-09-05
11637118 Three-dimensional memory device containing auxiliary support pillar structures and method of making the same Seiji Shimabukuro, Kengo Kajiwara 2023-04-25
11637038 Three-dimensional memory device containing self-aligned lateral contact elements and methods for forming the same Fumitaka Amano, Yuji Totoki 2023-04-25
11316437 Electronic circuit and wireless power transmission device Jun Itoh, Keisuke Kusaka, Koki Yamanokuchi, Shuichi Obayashi, Yasuhiro KANEKIYO 2022-04-26
10950627 Three-dimensional memory device including split memory cells and methods of forming the same Tatsuya Hinoue, Takaaki Iwai 2021-03-16
10468413 Method for forming hydrogen-passivated semiconductor channels in a three-dimensional memory device Seiji Shimabukuro, Hirotada Tobita 2019-11-05