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High aspect ratio via fill process employing selective metal deposition and structures formed by the same |
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Multi-tier three-dimensional memory device with nested contact via structures and methods for forming the same |
Yuji Totoki |
2022-11-01 |
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Yosuke Kita |
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Multi-layer barrier for CMOS under array type memory device and method of making thereof |
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2022-04-05 |
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Thermal metal chemical vapor deposition process |
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Three-dimensional memory device containing word lines formed by selective tungsten growth on nucleation controlling surfaces and methods of manufacturing the same |
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Selective tungsten growth for word lines of a three-dimensional memory device |
Takashi Arai, Genta Mizuno, Shigehisa Inoue, Naoki Takeguchi, Takashi HAMAYA |
2019-08-13 |
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Three dimensional memory device containing multilayer wordline barrier films and method of making thereof |
Rahul Sharangpani, Raghuveer S. Makala, Fei Zhou, Keerti Shukla |
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Three-dimensional memory device containing composite word lines including a metal silicide and an elemental metal and method of making thereof |
Rahul Sharangpani, Raghuveer S. Makala, Adarsh Rajashekhar, Fei Zhou |
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Semiconductor device containing multilayer titanium nitride diffusion barrier and method of making thereof |
Kensuke Ishikawa, Shinya Inoue, Michiaki Sano |
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Three-dimensional memory device having non-uniform spacing among memory stack structures and method of making thereof |
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Three-dimensional memory device having multi-layer diffusion barrier stack and method of making thereof |
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2017-08-29 |
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Integration of ALD barrier layer and CVD Ru liner for void-free Cu filling |
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Substrate processing method |
Kandabara Tapily |
2017-01-31 |
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