Issued Patents All Time
Showing 1–25 of 72 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 12426267 | Three-dimensional memory device and method of making thereof using sacrificial material regrowth | Bing Zhou, Raghuveer S. Makala | 2025-09-23 |
| 12387976 | Method of making a three-dimensional memory device using composite hard masks for formation of deep via openings | Roshan Jayakhar TIRUKKONDA, Bing Zhou, Rahul Sharangpani, Raghuveer S. Makala, Adarsh Rajashekhar | 2025-08-12 |
| 12317502 | Three-dimensional memory device containing ferroelectric-assisted memory elements and method of making the same | Ramy Nashed Bassely Said, Adarsh Rajashekhar, Raghuveer S. Makala | 2025-05-27 |
| 12267998 | Three-dimensional memory device including discrete charge storage elements and methods of forming the same | Rahul Sharangpani, Raghuveer S. Makala, Kartik SONDHI, Ramy Nashed Bassely Said | 2025-04-01 |
| 12261080 | Method of making a three-dimensional memory device using composite hard masks for formation of deep via openings | Roshan Jayakhar TIRUKKONDA, Monica Titus, Raghuveer S. Makala, Rahul Sharangpani, Adarsh Rajashekhar | 2025-03-25 |
| 12243776 | Method of making a three-dimensional memory device using composite hard masks for formation of deep via openings | Roshan Jayakhar TIRUKKONDA, Raghuveer S. Makala, Rahul Sharangpani, Monica Titus, Adarsh Rajashekhar | 2025-03-04 |
| 12245434 | Method of making a three-dimensional memory device using composite hard masks for formation of deep via openings | Monica Titus, Roshan Jayakhar TIRUKKONDA, Raghuveer S. Makala | 2025-03-04 |
| 12160989 | Three-dimensional memory device including an isolation-trench etch stop layer and methods for forming the same | Ramy Nashed Bassely Said, Raghuveer S. Makala, Jiahui Yuan | 2024-12-03 |
| 12150302 | Memory device including mixed oxide charge trapping materials and methods for forming the same | Ramy Nashed Bassely Said, Raghuveer S. Makala, Peng Zhang, Yanli Zhang | 2024-11-19 |
| 12010841 | Method of making a three-dimensional memory device using composite hard masks for formation of deep via openings | Monica Titus, Rahul Sharangpani, Raghuveer S. Makala, Yao-Sheng Lee | 2024-06-11 |
| 11972954 | Method of making a three-dimensional memory device using composite hard masks for formation of deep via openings | Roshan Jayakhar TIRUKKONDA, Rahul Sharangpani, Raghuveer S. Makala, Monica Titus | 2024-04-30 |
| 11968834 | Three-dimensional memory device including discrete charge storage elements with laterally-protruding profiles and methods of making thereof | Ramy Nashed Bassely Said, Raghuveer S. Makala, Fei Zhou | 2024-04-23 |
| 11968826 | Three-dimensional memory device with metal-barrier-metal word lines and methods of making the same | Ramy Nashed Bassely Said, Raghuveer S. Makala, Rahul Sharangpani | 2024-04-23 |
| 11749736 | Three-dimensional memory device including discrete charge storage elements and methods for forming the same | Xue Bai Pitner, Raghuveer S. Makala, Fei Zhou, Ramy Nashed Bassely Said | 2023-09-05 |
| 11631686 | Three-dimensional memory array including dual work function floating gates and method of making the same | Ramy Nashed Bassely Said, Yanli Zhang, Jiahui Yuan, Raghuveer S. Makala | 2023-04-18 |
| 11621277 | Multilevel memory stack structure with tapered inter-tier joint region and methods of making thereof | Monica Titus, Zhixin Cui, Yao-Sheng Lee, Chih-Yu Lee | 2023-04-04 |
| 11515250 | Three dimensional semiconductor device containing composite contact via structures and methods of making the same | Monica Titus, Ramy Nashed Bassely Said, Rahul Sharangpani, Raghuveer S. Makala | 2022-11-29 |
| 11515273 | Bonded assembly containing oxidation barriers, hybrid bonding, or air gap, and methods of forming the same | Ramy Nashed Bassely Said, Raghuveer S. Makala | 2022-11-29 |
| 11489043 | Three-dimensional memory device employing thinned insulating layers and methods for forming the same | James Kai, Johann Alsmeier | 2022-11-01 |
| 11482531 | Three-dimensional memory device including multi-bit charge storage elements and methods for forming the same | Ramy Nashed Bassely Said, Jiahui Yuan, Raghuveer S. Makala, Dana Lee | 2022-10-25 |
| 11469241 | Three-dimensional memory device including discrete charge storage elements and methods of forming the same | Raghuveer S. Makala, Fei Zhou, Yao-Sheng Lee | 2022-10-11 |
| 11450687 | Multibit ferroelectric memory cells and methods for forming the same | Roshan Jayakhar TIRUKKONDA, Ramy Nashed Bassely Said, Rahul Sharangpani, Raghuveer S. Makala, Adarsh Rajashekhar +1 more | 2022-09-20 |
| 11437270 | Three-dimensional memory device containing word lines formed by selective tungsten growth on nucleation controlling surfaces and methods of manufacturing the same | Rahul Sharangpani, Raghuveer S. Makala, Fei Zhou, Adarsh Rajashekhar, Fumitaka Amano +1 more | 2022-09-06 |
| 11430736 | Semiconductor device including having metal organic framework interlayer dielectric layer between metal lines and methods of forming the same | Ramy Nashed Bassely Said, Raghuveer S. Makala, Yao-Sheng Lee | 2022-08-30 |
| 11398496 | Three-dimensional memory device employing thinned insulating layers and methods for forming the same | James Kai, Johann Alsmeier | 2022-07-26 |