JY

Jiahui Yuan

ST Sandisk Technologies: 93 patents #15 of 2,224Top 1%
WT Western Digital Technologies: 5 patents #645 of 3,180Top 25%
Samsung: 2 patents #37,631 of 75,807Top 50%
GR Georgia Tech Research: 1 patents #1,150 of 2,755Top 45%
Overall (All Time): #14,121 of 4,157,543Top 1%
101
Patents All Time

Issued Patents All Time

Showing 25 most recent of 101 patents

Patent #TitleCo-InventorsDate
12430046 Early program termination with adaptive temperature compensation Sarath Puthenthermadam, Yihang Liu 2025-09-30
12431203 Memory program-verify with adaptive sense time based on row location Jiacen Guo, Xiang Yang, Yi Song 2025-09-30
12417809 Open block read ICC reduction Abu Naser Zainuddin, Deepanshu Dutta 2025-09-16
12406743 Non-volatile memory with smart control of overdrive voltage Yi Song, Xiaochen Zhu, Lito De La Rama 2025-09-02
12399653 Suspend-resume-go techniques for memory devices Albert Chen, Xiang Yang 2025-08-26
12394491 Apparatus and method for selectively reducing charge pump speed during erase operations Abu Naser Zainuddin, Mark Shlick, Shemmer Choresh 2025-08-19
12387802 Non-volatile memory with lower current program-verify Abu Naser Zainuddin, Toru Miwa 2025-08-12
12354678 Non-volatile memory with efficient testing Jayavel Pachamuthu, Dana Lee 2025-07-08
12354664 Non-volatile memory with loop dependant ramp-up rate Abu Naser Zainuddin, Toru Miwa 2025-07-08
12347779 Three-dimensional memory device with source line isolation and method of making the same Ramy Nashed Bassely Said, Lito De La Rama 2025-07-01
12346562 Non-volatile memory bitmap for garbage collection Liang Li, Xuan Tian, Ming Wang 2025-07-01
12346578 Distributed temperature sensing scheme to suppress peak Icc in non-volatile memories Abu Naser Zainuddin, Sai Gautham Thoppa 2025-07-01
12307104 Non-volatile memory with secure erase Liang Li, Ming Wang 2025-05-20
12293797 Apparatus and methods for smart verify with adaptive voltage offset Longju Liu, Sarath Puthenthermadam 2025-05-06
12288586 Non-volatile memory with sub-planes having individually biasable source lines Ramy Nashed Bassely Said, Lito De La Rama 2025-04-29
12249378 CELSRC voltage separation between SLC and XLC for SLC program average ICC reduction Yu-Chung Lien, Deepanshu Dutta, Sarath Puthenthermadam 2025-03-11
12224011 Non-volatile memory with concurrent sub-block programming Ke Zhang, Liang Li 2025-02-11
12176032 Word line dependent pass voltage ramp rate to improve performance of NAND memory Abu Naser Zainuddin, Towhidur Razzak 2024-12-24
12160989 Three-dimensional memory device including an isolation-trench etch stop layer and methods for forming the same Ramy Nashed Bassely Said, Raghuveer S. Makala, Senaka Kanakamedala 2024-12-03
12153801 Non-volatile memory with optimized operation sequence Yihang Liu, Xiaochen Zhu, Jie Liu, Sarath Puthenthermadam, Feng Gao 2024-11-26
12154630 Non-volatile memory with tuning of erase process Yi Song, Yanjie Wang 2024-11-26
12147695 Non-volatile memory with adapting erase process Longju Liu, Yi Song, Sarath Puthenthermadam 2024-11-19
12148489 Early detection of programming failure for non-volatile memory Yi Song, Sarath Puthenthermadam 2024-11-19
12119065 Non-volatile memory with zoned control for limiting programming for different groups of non-volatile memory cells Xiaochen Zhu, Lito De La Rama, Yi Song, Jiacen Guo 2024-10-15
12105963 NAND string read voltage adjustment Yi Song, Yanjie Wang 2024-10-01