Issued Patents All Time
Showing 1–25 of 233 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 12426267 | Three-dimensional memory device and method of making thereof using sacrificial material regrowth | Bing Zhou, Senaka Kanakamedala | 2025-09-23 |
| 12387976 | Method of making a three-dimensional memory device using composite hard masks for formation of deep via openings | Roshan Jayakhar TIRUKKONDA, Bing Zhou, Rahul Sharangpani, Senaka Kanakamedala, Adarsh Rajashekhar | 2025-08-12 |
| 12376299 | Three-dimensional memory device with intermetallic barrier liner and methods for forming the same | Rahul Sharangpani | 2025-07-29 |
| 12363905 | Memory device containing composition-controlled ferroelectric memory elements and method of making the same | Kartik SONDHI, Rahul Sharangpani, Tiffany Santos, Fei Zhou, Joyeeta Nag +2 more | 2025-07-15 |
| 12362301 | Bonded memory devices and methods of making the same | Adarsh Rajashekhar, Joyeeta Nag | 2025-07-15 |
| 12356627 | Memory device containing composition-controlled ferroelectric memory elements and method of making the same | Rahul Sharangpani, Kartik SONDHI, Tiffany Santos, Fei Zhou, Joyeeta Nag +1 more | 2025-07-08 |
| 12347773 | Three-dimensional memory device containing variable thickness word lines with reduced length metal nitride diffusion barriers and methods for forming the same | Rahul Sharangpani, Fei Zhou | 2025-07-01 |
| 12342537 | Three-dimensional memory device containing epitaxial pedestals and top source contact | Adarsh Rajashekhar, Masanori Tsutsumi, Fei Zhou | 2025-06-24 |
| 12317502 | Three-dimensional memory device containing ferroelectric-assisted memory elements and method of making the same | Ramy Nashed Bassely Said, Adarsh Rajashekhar, Senaka Kanakamedala | 2025-05-27 |
| 12289889 | Three-dimensional memory device containing templated crystalline ferroelectric memory elements and method of making thereof | Kartik SONDHI, Adarsh Rajashekhar, Fei Zhou | 2025-04-29 |
| 12267998 | Three-dimensional memory device including discrete charge storage elements and methods of forming the same | Rahul Sharangpani, Kartik SONDHI, Ramy Nashed Bassely Said, Senaka Kanakamedala | 2025-04-01 |
| 12261080 | Method of making a three-dimensional memory device using composite hard masks for formation of deep via openings | Roshan Jayakhar TIRUKKONDA, Monica Titus, Senaka Kanakamedala, Rahul Sharangpani, Adarsh Rajashekhar | 2025-03-25 |
| 12255242 | Three-dimensional memory device including vertical stack of tubular graded silicon oxynitride portions | Adarsh Rajashekhar, Koichi Matsuno | 2025-03-18 |
| 12245434 | Method of making a three-dimensional memory device using composite hard masks for formation of deep via openings | Monica Titus, Roshan Jayakhar TIRUKKONDA, Senaka Kanakamedala | 2025-03-04 |
| 12243776 | Method of making a three-dimensional memory device using composite hard masks for formation of deep via openings | Roshan Jayakhar TIRUKKONDA, Senaka Kanakamedala, Rahul Sharangpani, Monica Titus, Adarsh Rajashekhar | 2025-03-04 |
| 12217965 | Methods and apparatuses for forming semiconductor devices containing tungsten layers using a tungsten growth suppressant | Fei Zhou, Rahul Sharangpani, Yujin Terasawa, Naoki Takeguchi, Kensuke Yamaguchi +1 more | 2025-02-04 |
| 12219776 | Ferroelectric devices including a single crystalline ferroelectric layer and method of making the same | Adarsh Rajashekhar, Kartik SONDHI | 2025-02-04 |
| 12176203 | Methods and apparatuses for forming semiconductor devices containing tungsten layers using a tungsten growth suppressant | Fei Zhou, Rahul Sharangpani, Yujin Terasawa, Naoki Takeguchi, Kensuke Yamaguchi +1 more | 2024-12-24 |
| 12160989 | Three-dimensional memory device including an isolation-trench etch stop layer and methods for forming the same | Ramy Nashed Bassely Said, Jiahui Yuan, Senaka Kanakamedala | 2024-12-03 |
| 12150302 | Memory device including mixed oxide charge trapping materials and methods for forming the same | Ramy Nashed Bassely Said, Senaka Kanakamedala, Peng Zhang, Yanli Zhang | 2024-11-19 |
| 12144185 | Method of making ovonic threshold switch selectors using microwave annealing | Oleksandr Mosendz, Hyunsang Hwang, Jangseop Lee | 2024-11-12 |
| 12137554 | Three-dimensional memory device with word-line etch stop liners and method of making thereof | Adarsh Rajashekhar, Fei Zhou | 2024-11-05 |
| 12137565 | Three-dimensional memory device with vertical word line barrier and methods for forming the same | Rahul Sharangpani, Fei Zhou, Adarsh Rajashekhar | 2024-11-05 |
| 12124247 | Implementation of deep neural networks for testing and quality control in the production of memory devices | Fei Zhou, Cheng-Chung Chu | 2024-10-22 |
| 12096636 | Semiconductor device containing bit lines separated by air gaps and methods for forming the same | Adarsh Rajashekhar, Rahul Sharangpani, Fei Zhou | 2024-09-17 |