Issued Patents All Time
Showing 26–50 of 233 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 12087628 | High aspect ratio via fill process employing selective metal deposition and structures formed by the same | Rahul Sharangpani, Fumitaka Amano | 2024-09-10 |
| 12035535 | Three-dimensional NOR array including vertical word lines and discrete memory elements and methods of manufacture | Adarsh Rajashekhar, Rahul Sharangpani | 2024-07-09 |
| 12010841 | Method of making a three-dimensional memory device using composite hard masks for formation of deep via openings | Monica Titus, Senaka Kanakamedala, Rahul Sharangpani, Yao-Sheng Lee | 2024-06-11 |
| 11996462 | Ferroelectric field effect transistors having enhanced memory window and methods of making the same | Bhagwati Prasad, Joyeeta Nag, Seung-Yeul Yang, Adarsh Rajashekhar | 2024-05-28 |
| 11990413 | Three-dimensional memory device including aluminum alloy word lines and method of making the same | Linghan Chen, Fumitaka Amano | 2024-05-21 |
| 11984395 | Semiconductor device containing bit lines separated by air gaps and methods for forming the same | Adarsh Rajashekhar, Rahul Sharangpani, Fei Zhou | 2024-05-14 |
| 11972954 | Method of making a three-dimensional memory device using composite hard masks for formation of deep via openings | Roshan Jayakhar TIRUKKONDA, Senaka Kanakamedala, Rahul Sharangpani, Monica Titus | 2024-04-30 |
| 11973123 | Ferroelectric devices including a single crystalline ferroelectric layer and method of making the same | Adarsh Rajashekhar, Kartik SONDHI | 2024-04-30 |
| 11968834 | Three-dimensional memory device including discrete charge storage elements with laterally-protruding profiles and methods of making thereof | Ramy Nashed Bassely Said, Senaka Kanakamedala, Fei Zhou | 2024-04-23 |
| 11968826 | Three-dimensional memory device with metal-barrier-metal word lines and methods of making the same | Ramy Nashed Bassely Said, Senaka Kanakamedala, Rahul Sharangpani | 2024-04-23 |
| 11948902 | Bonded assembly including an airgap containing bonding-level dielectric layer and methods of forming the same | Lin Hou, Peter Rabkin, Adarsh Rajashekhar, Masaaki Higashitani | 2024-04-02 |
| 11903218 | Bonded memory devices and methods of making the same | Johann Alsmeier | 2024-02-13 |
| 11877446 | Three-dimensional memory device with electrically conductive layers containing vertical tubular liners and methods for forming the same | Rahul Sharangpani, Fei Zhou, Adarsh Rajashekhar | 2024-01-16 |
| 11778817 | Three-dimensional memory device including III-V compound semiconductor channel layer and method of making the same | Ashish Baraskar, Peter Rabkin | 2023-10-03 |
| 11749736 | Three-dimensional memory device including discrete charge storage elements and methods for forming the same | Xue Bai Pitner, Fei Zhou, Senaka Kanakamedala, Ramy Nashed Bassely Said | 2023-09-05 |
| 11721727 | Three-dimensional memory device including a silicon-germanium source contact layer and method of making the same | Ashish Baraskar, Peter Rabkin | 2023-08-08 |
| 11659711 | Three-dimensional memory device including discrete charge storage elements and methods of forming the same | Yuki KASAI, Shigehisa Inoue, Tomohiro Asano | 2023-05-23 |
| 11631695 | Three-dimensional memory device containing composite word lines containing metal and silicide and method of making thereof | Rahul Sharangpani, Fei Zhou, Adarsh Rajashekhar | 2023-04-18 |
| 11631686 | Three-dimensional memory array including dual work function floating gates and method of making the same | Ramy Nashed Bassely Said, Yanli Zhang, Jiahui Yuan, Senaka Kanakamedala | 2023-04-18 |
| 11594553 | Three-dimensional ferroelectric memory device containing lattice-matched templates and methods of making the same | Rahul Sharangpani, Fei Zhou, Adarsh Rajashekhar | 2023-02-28 |
| 11594490 | Three-dimensional memory device including molybdenum carbide or carbonitride liners and methods of forming the same | Rahul Sharangpani, Fei Zhou | 2023-02-28 |
| 11569260 | Three-dimensional memory device including discrete memory elements and method of making the same | Adarsh Rajashekhar, Fei Zhou, Rahul Sharangpani | 2023-01-31 |
| 11545506 | Ferroelectric field effect transistors having enhanced memory window and methods of making the same | Bhagwati Prasad, Joyeeta Nag, Seung-Yeul Yang, Adarsh Rajashekhar | 2023-01-03 |
| 11538817 | Bonded memory devices and methods of making the same | Johann Alsmeier | 2022-12-27 |
| 11538828 | Three-dimensional memory device with high mobility channels and nickel aluminum silicide or germanide drain contacts and method of making the same | Ashish Baraskar, Peter Rabkin | 2022-12-27 |