Issued Patents All Time
Showing 25 most recent of 133 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 12349353 | Three-dimensional nor array and method of making the same | Masaaki Higashitani, Hiroyuki Kinoshita, Satoshi Shimizu, Yanli Zhang, Johann Alsmeier | 2025-07-01 |
| 12347804 | Bonded assembly including interconnect-level bonding pads and methods of forming the same | Lin Hou, Yangyin Chen, Masaaki Higashitani, Rahul Sharangpani | 2025-07-01 |
| 12342543 | Three-dimensional nor array and method of making the same | Masaaki Higashitani, Hiroyuki Kinoshita | 2025-06-24 |
| 12289887 | Three dimensional memory device containing resonant tunneling barrier and high mobility channel and method of making the same | Masaaki Higashitani | 2025-04-29 |
| 12245425 | Three dimensional memory device containing resonant tunneling barrier and high mobility channel and method of making thereof | Masaaki Higashitani | 2025-03-04 |
| 12219756 | Three dimensional memory device containing resonant tunneling barrier and high mobility channel and method of making thereof | Masaaki Higashitani | 2025-02-04 |
| 12127410 | Memory device including a ferroelectric semiconductor channel and methods of forming the same | Masaaki Higashitani | 2024-10-22 |
| 12125814 | Bonded assembly containing different size opposing bonding pads and methods of forming the same | Lin Hou, Masaaki Higashitani | 2024-10-22 |
| 12016179 | Three dimensional memory device containing resonant tunneling barrier and high mobility channel and method of making thereof | Masaaki Higashitani | 2024-06-18 |
| 11963352 | Three-dimensional memory device with vertical field effect transistors and method of making thereof | Masaaki Higashitani | 2024-04-16 |
| 11948902 | Bonded assembly including an airgap containing bonding-level dielectric layer and methods of forming the same | Lin Hou, Adarsh Rajashekhar, Raghuveer S. Makala, Masaaki Higashitani | 2024-04-02 |
| 11869877 | Bonded assembly including inter-die via structures and methods for making the same | Lin Hou, Yangyin Chen, Masaaki Higashitani | 2024-01-09 |
| 11778817 | Three-dimensional memory device including III-V compound semiconductor channel layer and method of making the same | Ashish Baraskar, Raghuveer S. Makala | 2023-10-03 |
| 11728305 | Capacitor structure including bonding pads as electrodes and methods of forming the same | Shiqian Shao, Fumiaki Toyama | 2023-08-15 |
| 11721727 | Three-dimensional memory device including a silicon-germanium source contact layer and method of making the same | Ashish Baraskar, Raghuveer S. Makala | 2023-08-08 |
| 11676954 | Bonded three-dimensional memory devices with backside source power supply mesh and methods of making the same | Masaaki Higashitani, Kwang Ho Kim | 2023-06-13 |
| 11646283 | Bonded assembly containing low dielectric constant bonding dielectric material | Lin Hou, Masaaki Higashitani, Ramy Nashed Bassely Said | 2023-05-09 |
| 11646282 | Bonded semiconductor die assembly with metal alloy bonding pads and methods of forming the same | Lin Hou, Masaaki Higashitani | 2023-05-09 |
| 11646081 | Reliability compensation for uneven NAND block degradation | Xiang Yang, Henry Chin, Ken Oowada, Dengtao Zhao, Gerrit Jan Hemink | 2023-05-09 |
| 11569215 | Three-dimensional memory device with vertical field effect transistors and method of making thereof | Kwang Ho Kim | 2023-01-31 |
| 11562975 | Bonded assembly employing metal-semiconductor bonding and metal-metal bonding and methods of forming the same | Lin Hou, Masaaki Higashitani | 2023-01-24 |
| 11538828 | Three-dimensional memory device with high mobility channels and nickel aluminum silicide or germanide drain contacts and method of making the same | Ashish Baraskar, Raghuveer S. Makala | 2022-12-27 |
| 11508654 | Non-volatile memory with capacitors using metal under signal line or above a device capacitor | Luisa Lin, Mohan Dunga, Venkatesh Ramachandra, Masaaki Higashitani | 2022-11-22 |
| 11508748 | Three-dimensional memory device containing III-V compound semiconductor channel and contacts and method of making the same | Ashish Baraskar, Raghuveer S. Makala | 2022-11-22 |
| 11495613 | Three-dimensional memory device with high mobility channels and nickel aluminum silicide or germanide drain contacts and method of making the same | Ashish Baraskar, Raghuveer S. Makala | 2022-11-08 |