Issued Patents All Time
Showing 1–15 of 15 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 8946003 | Method of forming transistors with ultra-short gate feature | Peter Rabkin, Hsingya Arthur Wang | 2015-02-03 |
| 8288219 | Method of forming a non-volatile memory cell using off-set spacers | Peter Rabkin, Hsingya Arthur Wang | 2012-10-16 |
| 7408212 | Stackable resistive cross-point memory with schottky diode isolation | Harry Luan, Jein-Chen Young, Arthur Wang, Kenlin Huang | 2008-08-05 |
| 7250341 | Flash memory device having poly spacers | Hsingya Arthur Wang, Peter Rabkin | 2007-07-31 |
| 7202134 | Method of forming transistors with ultra-short gate feature | Peter Rabkin, Hsingya Arthur Wang | 2007-04-10 |
| 7172939 | Method and structure for fabricating non volatile memory arrays | Harry Laun, Kenlin Huang, J.C. Young, Arthur Wang | 2007-02-06 |
| 7160774 | Method of forming polysilicon layers in non-volatile memory | Peter Rabkin, Hsingya Arthur Wang | 2007-01-09 |
| 6911370 | Flash memory device having poly spacers | Hsingya Arthur Wang, Peter Rabkin | 2005-06-28 |
| 6876582 | Flash memory cell erase scheme using both source and channel regions | Hsingya Arthur Wang, Peter Rabkin | 2005-04-05 |
| 6849489 | Method for forming transistors with ultra-short gate feature | Peter Rabkin, Hsingya Arthur Wang | 2005-02-01 |
| 6818504 | Processes and structures for self-aligned contact non-volatile memory with peripheral transistors easily modifiable for various technologies and applications | Peter Rabkin, Hsingya Arthur Wang | 2004-11-16 |
| 6812515 | Polysilicon layers structure and method of forming same | Peter Rabkin, Hsingya Arthur Wang | 2004-11-02 |
| 6777741 | Non-volatile memory cells with selectively formed floating gate | Peter Rabkin, Hsingya Arthur Wang | 2004-08-17 |
| 6746906 | Transistor with ultra-short gate feature and method of fabricating the same | Peter Rabkin, Hsingya Arthur Wang | 2004-06-08 |
| 6559008 | Non-volatile memory cells with selectively formed floating gate | Peter Rabkin, Hsingya Arthur Wang | 2003-05-06 |