Patent Leaderboard
USPTO Patent Rankings Data through Dec 31, 2025
Home › Three-dimensional memory device with high mobility channels and nickel aluminum silicide or germanide drain contacts and method of making the same

Three-dimensional memory device with high mobility channels and nickel aluminum silicide or germanide drain contacts and method of making the same

US Patent 11538828 · Granted Dec 27, 2022

Assignee

Inventors

View full patent text on Google Patents →

More Patents by These Inventors

Three-dimensional memory device including composite backside metal fill structur2025
Three-dimensional memory device and method of making thereof by non-conformal se2025
Growth of thin oxide layer with silicon nitride and conversion2025
Three-dimensional memory device containing engineered charge storage elements an2025
Memory device including composite metal oxide semiconductor channels and methods2025
Three-dimensional memory device including discrete charge storage elements and m2025
Three-dimensional memory device and method of making thereof using sacrificial m2025
Method of making a three-dimensional memory device using composite hard masks fo2025
Three-dimensional memory device with intermetallic barrier liner and methods for2025
Bonded memory devices and methods of making the same2025
Memory device containing composition-controlled ferroelectric memory elements an2025
Memory device containing composition-controlled ferroelectric memory elements an2025