| 12347804 |
Bonded assembly including interconnect-level bonding pads and methods of forming the same |
Lin Hou, Peter Rabkin, Masaaki Higashitani, Rahul Sharangpani |
2025-07-01 |
| 11869877 |
Bonded assembly including inter-die via structures and methods for making the same |
Lin Hou, Peter Rabkin, Masaaki Higashitani |
2024-01-09 |
| 11430745 |
Semiconductor die containing silicon nitride stress compensating regions and method for making the same |
Chen Wu, Peter Rabkin, Masaaki Higashitani |
2022-08-30 |
| 11424215 |
Bonded assembly formed by hybrid wafer bonding using selectively deposited metal liners |
Lin Hou, Peter Rabkin, Masaaki Higashitani |
2022-08-23 |
| 11348901 |
Interfacial tilt-resistant bonded assembly and methods for forming the same |
Lin Hou, Peter Rabkin, Masaaki Higashitani |
2022-05-31 |
| 11276705 |
Embedded bonded assembly and method for making the same |
Chen Wu, Peter Rabkin, Masaaki Higashitani |
2022-03-15 |
| 11239204 |
Bonded assembly containing laterally bonded bonding pads and methods of forming the same |
Chen Wu, Peter Rabkin, Masaaki Higashitani |
2022-02-01 |
| 11094653 |
Bonded assembly containing a dielectric bonding pattern definition layer and methods of forming the same |
Chen Wu, Peter Rabkin, Masaaki Higashitani |
2021-08-17 |
| 11037908 |
Bonded die assembly containing partially filled through-substrate via structures and methods for making the same |
Chen Wu, Peter Rabkin, Masaaki Higashitani |
2021-06-15 |
| 10756186 |
Three-dimensional memory device including germanium-containing vertical channels and method of making the same |
Christopher J. Petti |
2020-08-25 |
| 10734408 |
Ferroelectric non-volatile memory |
Yingda Dong, Yukihiro Sakotsubo |
2020-08-04 |
| 10559588 |
Three-dimensional flat inverse NAND memory device and method of making the same |
Yingda Dong, James Kai |
2020-02-11 |
| 10461095 |
Ferroelectric non-volatile memory |
Yingda Dong, Yukihiro Sakotsubo |
2019-10-29 |
| 10453861 |
Ferroelectric non-volatile memory |
Yingda Dong, Yukihiro Sakotsubo |
2019-10-22 |
| 10453862 |
Ferroelectric non-volatile memory |
Yingda Dong, Yukihiro Sakotsubo |
2019-10-22 |
| 10109679 |
Wordline sidewall recess for integrating planar selector device |
Christopher J. Petti |
2018-10-23 |
| 10038092 |
Three-level ferroelectric memory cell using band alignment engineering |
Christopher J. Petti |
2018-07-31 |
| 10026782 |
Implementation of VMCO area switching cell to VBL architecture |
Yoichiro Tanaka, Chu-Chen Fu, Christopher J. Petti |
2018-07-17 |
| 9941331 |
Device with sub-minimum pitch and method of making |
Jordan Asher Katine, Christopher J. Petti |
2018-04-10 |
| 9941299 |
Three-dimensional ferroelectric memory device and method of making thereof |
Christopher J. Petti |
2018-04-10 |
| 9768180 |
Methods and apparatus for three-dimensional nonvolatile memory |
Guangle Zhou, Yubao Li, Tanmay Kumar |
2017-09-19 |
| 9754665 |
Vacancy-modulated conductive oxide resistive RAM device including an interfacial oxygen source layer |
Christopher J. Petti, Kun Hou |
2017-09-05 |
| 9735202 |
Implementation of VMCO area switching cell to VBL architecture |
Yoichiro Tanaka, Chu-Chen Fu, Christopher J. Petti |
2017-08-15 |