Issued Patents All Time
Showing 25 most recent of 156 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 12406966 | Device with embedded high-bandwidth, high-capacity memory using wafer bonding | Khandker N. Quader, Robert Norman, Frank Sai-keung Lee, Scott Brad Herner, Siu Lung Chan +3 more | 2025-09-02 |
| 12256547 | Silicon oxide nitride tunnel dielectric for a storage transistor in a 3-dimensional NOR memory string array | Scott Brad Herner, George Samachisa, Wu-Yi Henry Chien | 2025-03-18 |
| 12245429 | Quasi-volatile memory with reference bit line structure | — | 2025-03-04 |
| 12205640 | Overwrite read methods for resistance switching memory devices | Michael Grobis, Daniel Bedau | 2025-01-21 |
| 12160996 | Three-dimensional memory string array of thin-film ferroelectric transistors | Vinod R. Purayath, George Samachisa, Wu-Yi Henry Chien, Eli Harari | 2024-12-03 |
| 12073886 | Semiconductor memory device with write disturb reduction | — | 2024-08-27 |
| 12068286 | Device with embedded high-bandwidth, high-capacity memory using wafer bonding | Khandker N. Quader, Robert Norman, Frank Sai-keung Lee, Scott Brad Herner, Siu Lung Chan +3 more | 2024-08-20 |
| 11923341 | Memory device including modular memory units and modular circuit units for concurrent memory operations | Khandker N. Quader, Robert Norman, Frank Sai-keung Lee, Scott Brad Herner, Siu Lung Chan +3 more | 2024-03-05 |
| 11839086 | 3-dimensional memory string array of thin-film ferroelectric transistors | Vinod R. Purayath, George Samachisa, Wu-Yi Henry Chien, Eli Harari | 2023-12-05 |
| 11670620 | Device with embedded high-bandwidth, high-capacity memory using wafer bonding | Khandker N. Quader, Robert Norman, Frank Sai-keung Lee, Scott Brad Herner, Siu Lung Chan +3 more | 2023-06-06 |
| 11456333 | Three-dimensional NAND memory device containing two terminal selector and methods of using and making thereof | Yu-Chung Lien, Jiahui Yuan, Deepanshu Dutta | 2022-09-27 |
| 11380709 | Three dimensional ferroelectric memory | Yingda Dong, James Kai | 2022-07-05 |
| 11101326 | Methods of forming a phase change memory with vertical cross-point structure | Federico Nardi, Gerrit Jan Hemink | 2021-08-24 |
| 11088206 | Methods of forming a phase change memory with vertical cross-point structure | Federico Nardi, Gerrit Jan Hemink | 2021-08-10 |
| 11031059 | Magnetic random-access memory with selector voltage compensation | Tz-Yi Liu, Ali Al-Shamma, Yoocharn Jeon | 2021-06-08 |
| 10957680 | Semiconductor die stacking using vertical interconnection by through-dielectric via structures and methods for making the same | Shinsuke Yada, Masanori Tsutsumi, Sayako Nagamine, Yuji Fukano, Akio Nishida | 2021-03-23 |
| 10885991 | Data rewrite during refresh window | Ward Parkinson, Martin Hassner, Nathan Franklin | 2021-01-05 |
| 10853244 | Randomly writable memory device and method of operating thereof | Srikanth Ranganathan | 2020-12-01 |
| 10756186 | Three-dimensional memory device including germanium-containing vertical channels and method of making the same | Yangyin Chen | 2020-08-25 |
| 10741585 | Content addressable memory using threshold-adjustable vertical transistors and methods of forming the same | — | 2020-08-11 |
| 10734073 | Three terminal isolation elements and methods | Abhijit Bandyopadhyay, Brian Le | 2020-08-04 |
| 10727276 | Three-dimensional NAND memory device containing two terminal selector and methods of using and making thereof | Yu-Chung Lien, Jiahui Yuan, Deepanshu Dutta | 2020-07-28 |
| 10714534 | Three terminal isolation elements and methods | Abhijit Bandyopadhyay, Brian Le | 2020-07-14 |
| 10580976 | Three-dimensional phase change memory device having a laterally constricted element and method of making the same | Yuji Takahashi, Vincent Shih | 2020-03-03 |
| 10534840 | Multiplication using non-volatile memory cells | — | 2020-01-14 |