Federico Nardi — 30 Patents at Intermolecular

Federico Nardi has been granted 30 US patents while listed as an inventor at Intermolecular. The first was granted in 2014 and the most recent in April 2024. Federico Nardi ranks #121,623 of 4,157,543 US inventors in our database (top 2.9%). Patent records list Federico Nardi in Palo Alto, CA, US.

Issued Patents All Time

Showing 1–25 of 30 patents

Patent #	Title	Co-Inventors	Date	Approx Value ⓘ
11948630	Two-terminal one-time programmable fuses for memory cells	—	2024-04-02	$42,223,000
11790989	Soft reset for multi-level programming of memory cells in non-von neumann architectures	Deepak Kamalanathan, Siddarth A. Krishnan, Archana Kumar, Fuxi Cai	2023-10-17	$42,568,000
11397790	Vector matrix multiplication with 3D NAND	Gerrit Jan Hemink, Won Ho Choi	2022-07-26
11361829	In-storage logic for hardware accelerators	Won Ho Choi	2022-06-14
11101326	Methods of forming a phase change memory with vertical cross-point structure	Christopher J. Petti, Gerrit Jan Hemink	2021-08-24
11088206	Methods of forming a phase change memory with vertical cross-point structure	Christopher J. Petti, Gerrit Jan Hemink	2021-08-10
11017856	Soft reset for multi-level programming of memory cells in non-Von Neumann architectures	Deepak Kamalanathan, Siddarth A. Krishnan, Archana Kumar, Fuxi Cai	2021-05-25	$67,143,000
10943952	Threshold switch for memory	Ming-Che Wu, Tim Minvielle, Zhaoqiang Bai	2021-03-09
10374014	Multi-state phase change memory device with vertical cross-point structure	Christopher J. Petti, Gerrit Jan Hemink	2019-08-06	$64,000
10290348	Write-once read-many amorphous chalcogenide-based memory	—	2019-05-14
10262730	Multi-state and confined phase change memory with vertical cross-point structure	Christopher J. Petti, Gerrit Jan Hemink	2019-04-16
10147876	Phase change memory electrode with multiple thermal interfaces	Lidu Huang, Mac D. Apodaca, Toshiki Hirano, Ailian Zhao, Guy Wicker	2018-12-04
10050194	Resistive memory device including a lateral air gap around a memory element and method of making thereof	Chu-Chen Fu	2018-08-14
9786368	Two stage forming of resistive random access memory cells	Yun Wang	2017-10-10	$628,000
9680092	Current selectors formed using single stack structures	Mark Clark	2017-06-13	$623,000
9620205	All around electrode for novel 3D RRAM applications	Sergey Barabash, Yun Wang	2017-04-11	$629,000
9246087	Electron barrier height controlled interfaces of resistive switching layers in resistive random access memory cells	Yun Wang	2016-01-26	$68,000
9246091	ReRAM cells with diffusion-resistant metal silicon oxide layers	Yun Wang	2016-01-26	$68,000
9246094	Stacked bi-layer as the low power switchable RRAM	Yun Wang, Milind Weling	2016-01-26	$68,000
9245649	Resistive switching sample and hold	Ryan Clarke, Yun Wang	2016-01-26	$68,000
9224951	Current-limiting electrodes	Yun Wang, Milind Weling	2015-12-29	$129,000
9178000	Resistive random access memory cells having shared electrodes with transistor devices	Ryan Clarke, Tim Minvielle, Yun Wang	2015-11-03	$43,000
9178140	Morphology control of ultra-thin MeOx layer	Yun Wang	2015-11-03	$43,000
9054634	Voltage controlling assemblies including variable resistance devices	Yun Wang	2015-06-09	$393,000
9047940	Resistive random access memory cells having variable switching characteristics	Yun Wang	2015-06-02

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Federico Nardi — 30 Patents

Issued Patents All Time

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