Issued Patents All Time
Showing 25 most recent of 47 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 10943952 | Threshold switch for memory | Federico Nardi, Ming-Che Wu, Zhaoqiang Bai | 2021-03-09 |
| 9343673 | Method for forming metal oxides and silicides in a memory device | Dipankar Pramanik, Tony P. Chiang, Takeshi Yamaguchi | 2016-05-17 |
| 9299926 | Nonvolatile memory device using a tunnel oxide layer and oxygen blocking layer as a current limiter element | Mihir Tendulkar, Imran Hashim, Yun Wang, Takeshi Yamaguchi | 2016-03-29 |
| 9275727 | Multi-level memory array having resistive elements for multi-bit data storage | Dipankar Pramanik, David E. Lazovsky, Takeshi Yamaguchi | 2016-03-01 |
| 9276203 | Resistive switching layers including Hf-Al-O | Chien-Lan Hsueh, Randall J. Higuchi, Jinhong Tong, Yun Wang, Takeshi Yamaguchi | 2016-03-01 |
| 9246096 | Atomic layer deposition of metal oxides for memory applications | Zhendong Hong, Vidyut Gopal, Imran Hashim, Randall J. Higuchi, Hieu Pham +1 more | 2016-01-26 |
| 9178148 | Resistive random access memory cell having three or more resistive states | Imran Hashim, Ryan Clarke, Nan Lu, Takeshi Yamaguchi | 2015-11-03 |
| 9178000 | Resistive random access memory cells having shared electrodes with transistor devices | Federico Nardi, Ryan Clarke, Yun Wang | 2015-11-03 |
| 9087978 | Transition metal oxide bilayers | Hieu Pham, Vidyut Gopal, Imran Hashim, Yun Wang, Takeshi Yamaguchi +1 more | 2015-07-21 |
| 9082969 | Keyhole-free sloped heater for phase change memory | Soonwoo Cha, Jong Won Lee, Jinwook Lee | 2015-07-14 |
| 9054307 | Resistive random access memory cells having metal alloy current limiting layers | Yun Wang, Tony P. Chiang, Imran Hashim, Dipankar Pramanik, Takeshi Yamaguchi | 2015-06-09 |
| 9006026 | Atomic layer deposition of metal oxides for memory applications | Zhendong Hong, Vidyut Gopal, Imran Hashim, Randall J. Higuchi, Hieu Pham +1 more | 2015-04-14 |
| 9001554 | Resistive random access memory cell having three or more resistive states | Imran Hashim, Ryan Clarke, Nan Lu, Takeshi Yamaguchi | 2015-04-07 |
| 8995166 | Multi-level memory array having resistive elements for multi-bit data storage | Dipankar Pramanik, David E. Lazovsky, Takeshi Yamaguchi | 2015-03-31 |
| 8987697 | Transition metal oxide bilayers | Hieu Pham, Vidyut Gopal, Imran Hashim, Yun Wang, Takeshi Yamaguchi +1 more | 2015-03-24 |
| 8980766 | Sequential atomic layer deposition of electrodes and resistive switching components | Yun Wang, Tony P. Chiang, Takeshi Yamaguchi | 2015-03-17 |
| 8975727 | Memory cell having an integrated two-terminal current limiting resistor | Yun Wang, Tony P. Chiang, Imran Hashim, Dipankar Pramanik, Takeshi Yamaguchi | 2015-03-10 |
| 8975114 | Method for forming metal oxides and silicides in a memory device | Dipankar Pramanik, Tony P. Chiang, Takeshi Yamaguchi | 2015-03-10 |
| 8906736 | Multifunctional electrode | Hieu Pham, Vidyut Gopal, Imran Hashim, Dipankar Pramanik, Yun Wang +2 more | 2014-12-09 |
| 8890109 | Resistive random access memory access cells having thermally isolating structures | Yun Wang, Tony P. Chiang, Takeshi Yamaguchi | 2014-11-18 |
| 8860002 | Limited maximum fields of electrode-switching layer interfaces in Re-RAM cells | Mihir Tendulkar, Imran Hashim, Yun Wang, Takeshi Yamaguchi | 2014-10-14 |
| 8859328 | Multifunctional electrode | Hieu Pham, Vidyut Gopal, Imran Hashim, Dipankar Pramanik, Yun Wang +2 more | 2014-10-14 |
| 8852996 | Carbon doped resistive switching layers | Yun Wang, Tony P. Chiang, Takeshi Yamaguchi | 2014-10-07 |
| 8853099 | Nonvolatile resistive memory element with a metal nitride containing switching layer | Yun Wang, Tony P. Chiang, Imran Hashim, Takeshi Yamaguchi | 2014-10-07 |
| 8846443 | Atomic layer deposition of metal oxides for memory applications | Zhendong Hong, Hieu Pham, Randall J. Higuchi, Vidyut Gopal, Imran Hashim +1 more | 2014-09-30 |