| 9543516 |
Method for forming a doped metal oxide for use in resistive switching memory elements |
Jinhong Tong, Randall J. Higuchi, Imran Hashim |
2017-01-10 |
$761,000 |
| 9444047 |
Embedded nonvolatile memory elements having resistive switching characteristics |
Imran Hashim, Tony P. Chiang, Yun Wang |
2016-09-13 |
$237,000 |
| 9318333 |
Dielectric extension to mitigate short channel effects |
Shankar Sinha, Jean Y. Yang, Phillip Jones |
2016-04-19 |
$2,645,000 |
| 9269896 |
Confined defect profiling within resistive random memory access cells |
Yun Wang, Chien-Lan Hsueh |
2016-02-23 |
$429,000 |
| 9246096 |
Atomic layer deposition of metal oxides for memory applications |
Zhendong Hong, Imran Hashim, Randall J. Higuchi, Tim Minvielle, Hieu Pham +1 more |
2016-01-26 |
$68,000 |
| 9130165 |
Atomic layer deposition of metal oxide materials for memory applications |
Yun Wang, Tony P. Chiang, Imran Hashim, Dipankar Pramanik |
2015-09-08 |
$391,000 |
| 9129894 |
Embedded nonvolatile memory elements having resistive switching characteristics |
Imran Hashim, Tony P. Chiang, Yun Wang |
2015-09-08 |
$391,000 |
| 9087978 |
Transition metal oxide bilayers |
Hieu Pham, Imran Hashim, Tim Minvielle, Yun Wang, Takeshi Yamaguchi +1 more |
2015-07-21 |
|
| 9065040 |
Controlling composition of multiple oxides in resistive switching layers using atomic layer deposition |
Chien-Lan Hsueh, Randall J. Higuchi, Takeshi Yamaguchi |
2015-06-23 |
|
| 9006026 |
Atomic layer deposition of metal oxides for memory applications |
Zhendong Hong, Imran Hashim, Randall J. Higuchi, Tim Minvielle, Hieu Pham +1 more |
2015-04-14 |
|
| 8987697 |
Transition metal oxide bilayers |
Hieu Pham, Imran Hashim, Tim Minvielle, Yun Wang, Takeshi Yamaguchi +1 more |
2015-03-24 |
|
| 8913418 |
Confined defect profiling within resistive random memory access cells |
Yun Wang, Chien-Lan Hsueh |
2014-12-16 |
|
| 8912518 |
Resistive random access memory cells having doped current limiting layers |
David Chi, Minh Huu Le, Minh Anh Nguyen, Dipankar Pramanik, Milind Weling |
2014-12-16 |
$1,545,000 |
| 8906736 |
Multifunctional electrode |
Hieu Pham, Imran Hashim, Tim Minvielle, Dipankar Pramanik, Yun Wang +2 more |
2014-12-09 |
|
| 8883655 |
Atomic layer deposition of metal oxide materials for memory applications |
Yun Wang, Tony P. Chiang, Imran Hashim, Dipankar Pramanik |
2014-11-11 |
$6,287,000 |
| 8883557 |
Controlling composition of multiple oxides in resistive switching layers using atomic layer deposition |
Chien-Lan Hsueh, Randall J. Higuchi, Takeshi Yamaguchi |
2014-11-11 |
|
| 8859328 |
Multifunctional electrode |
Hieu Pham, Imran Hashim, Tim Minvielle, Dipankar Pramanik, Yun Wang +2 more |
2014-10-14 |
|
| 8846443 |
Atomic layer deposition of metal oxides for memory applications |
Zhendong Hong, Hieu Pham, Randall J. Higuchi, Imran Hashim, Tim Minvielle +1 more |
2014-09-30 |
|
| 8802492 |
Method for forming resistive switching memory elements |
Jinhong Tong, Randall J. Higuchi, Imran Hashim |
2014-08-12 |
|
| 8791445 |
Interfacial oxide used as switching layer in a nonvolatile resistive memory element |
Randall J. Higuchi, Tony P. Chiang, Ryan Clarke, Imran Hashim, Robert A. Huertas +1 more |
2014-07-29 |
$1,713,000 |
| 8787066 |
Method for forming resistive switching memory elements with improved switching behavior |
Yun Wang, Tony P. Chiang, Imran Hashim |
2014-07-22 |
|
| 8779407 |
Multifunctional electrode |
Hieu Pham, Imran Hashim, Dipankar Pramanik, Yun Wang, Hong Sheng Yang |
2014-07-15 |
|
| 8741698 |
Atomic layer deposition of zirconium oxide for forming resistive-switching materials |
Jinhong Tong, Imran Hashim, Randall J. Higuchi, Albert S. Lee |
2014-06-03 |
|
| 8735217 |
Multifunctional electrode |
Hieu Pham, Imran Hashim, Tim Minvielle, Dipankar Pramanik, Yun Wang +2 more |
2014-05-27 |
|
| 8704203 |
Transition metal oxide bilayers |
Hieu Pham, Imran Hashim, Tim Minvielle, Yun Wang, Takeshi Yamaguchi +1 more |
2014-04-22 |
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