Issued Patents All Time
Showing 1–19 of 19 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 10669627 | Multi-layer deposition system and process | Yang Yun, Max Sorenson, Tining Su, Jim Dempster, Alex Anderson +1 more | 2020-06-02 |
| 10553512 | Hybrid parylene-metal oxide layers for corrosion resistant coatings | Layton Baker, Sean Clancy | 2020-02-04 |
| 9276203 | Resistive switching layers including Hf-Al-O | Randall J. Higuchi, Tim Minvielle, Jinhong Tong, Yun Wang, Takeshi Yamaguchi | 2016-03-01 |
| 9269896 | Confined defect profiling within resistive random memory access cells | Yun Wang, Vidyut Gopal | 2016-02-23 |
| 9269567 | High productivity combinatorial processing using pressure-controlled one-way valves | Chen-An Chen, Tony P. Chiang, Martin Romero, James Tsung | 2016-02-23 |
| 9246099 | Low-temperature deposition of nitrides by UV-assisted ALD or CVD | Randall J. Higuchi | 2016-01-26 |
| 9178152 | Metal organic chemical vapor deposition of embedded resistors for ReRAM cells | Yun Wang | 2015-11-03 |
| 9065040 | Controlling composition of multiple oxides in resistive switching layers using atomic layer deposition | Vidyut Gopal, Randall J. Higuchi, Takeshi Yamaguchi | 2015-06-23 |
| 9040413 | Using saturated and unsaturated ALD processes to deposit oxides as ReRAM switching layer | Randall J. Higuchi, Yun Wang | 2015-05-26 |
| 9029192 | Metal organic chemical vapor deposition of resistive switching layers for ReRAM cells | Yun Wang | 2015-05-12 |
| 9018068 | Nonvolatile resistive memory element with a silicon-based switching layer | Randall J. Higuchi, Yun Wang | 2015-04-28 |
| 9006696 | Metal aluminum nitride embedded resistors for resistive random memory access cells | Mihir Tendulkar, Randall J. Higuchi | 2015-04-14 |
| 8969129 | ReRAM cells including TaXSiYN embedded resistors | Randall J. Higuchi, Mihir Tendulkar | 2015-03-03 |
| 8913418 | Confined defect profiling within resistive random memory access cells | Yun Wang, Vidyut Gopal | 2014-12-16 |
| 8883557 | Controlling composition of multiple oxides in resistive switching layers using atomic layer deposition | Vidyut Gopal, Randall J. Higuchi, Takeshi Yamaguchi | 2014-11-11 |
| 8853046 | Using TiON as electrodes and switching layers in ReRAM devices | Nan Lu | 2014-10-07 |
| 8853661 | Metal aluminum nitride embedded resistors for resistive random memory access cells | Mihir Tendulkar, Randall J. Higuchi | 2014-10-07 |
| 8846484 | ReRAM stacks preparation by using single ALD or PVD chamber | Albert S. Lee, Tim Minvielle, Takeshi Yamaguchi | 2014-09-30 |
| 8835890 | ReRAM cells including TaXSiYN embedded resistors | Randall J. Higuchi, Mihir Tendulkar | 2014-09-16 |