Issued Patents All Time
Showing 1–19 of 19 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 9543516 | Method for forming a doped metal oxide for use in resistive switching memory elements | Jinhong Tong, Imran Hashim, Vidyut Gopal | 2017-01-10 |
| 9425394 | Doped oxide dielectrics for resistive random access memory cells | Brian R. Butcher, Yun Wang | 2016-08-23 |
| 9276203 | Resistive switching layers including Hf-Al-O | Chien-Lan Hsueh, Tim Minvielle, Jinhong Tong, Yun Wang, Takeshi Yamaguchi | 2016-03-01 |
| 9246099 | Low-temperature deposition of nitrides by UV-assisted ALD or CVD | Chien-Lan Hsueh | 2016-01-26 |
| 9246096 | Atomic layer deposition of metal oxides for memory applications | Zhendong Hong, Vidyut Gopal, Imran Hashim, Tim Minvielle, Hieu Pham +1 more | 2016-01-26 |
| 9065040 | Controlling composition of multiple oxides in resistive switching layers using atomic layer deposition | Chien-Lan Hsueh, Vidyut Gopal, Takeshi Yamaguchi | 2015-06-23 |
| 9040413 | Using saturated and unsaturated ALD processes to deposit oxides as ReRAM switching layer | Chien-Lan Hsueh, Yun Wang | 2015-05-26 |
| 9018068 | Nonvolatile resistive memory element with a silicon-based switching layer | Chien-Lan Hsueh, Yun Wang | 2015-04-28 |
| 9018037 | Vertical oxide-oxide interface for forming-free, low power and low variability RRAM devices | Federico Nardi, Robert A. Huertas, Yun Wang | 2015-04-28 |
| 9006696 | Metal aluminum nitride embedded resistors for resistive random memory access cells | Mihir Tendulkar, Chien-Lan Hsueh | 2015-04-14 |
| 9006026 | Atomic layer deposition of metal oxides for memory applications | Zhendong Hong, Vidyut Gopal, Imran Hashim, Tim Minvielle, Hieu Pham +1 more | 2015-04-14 |
| 8969129 | ReRAM cells including TaXSiYN embedded resistors | Chien-Lan Hsueh, Mihir Tendulkar | 2015-03-03 |
| 8883557 | Controlling composition of multiple oxides in resistive switching layers using atomic layer deposition | Chien-Lan Hsueh, Vidyut Gopal, Takeshi Yamaguchi | 2014-11-11 |
| 8853661 | Metal aluminum nitride embedded resistors for resistive random memory access cells | Mihir Tendulkar, Chien-Lan Hsueh | 2014-10-07 |
| 8846443 | Atomic layer deposition of metal oxides for memory applications | Zhendong Hong, Hieu Pham, Vidyut Gopal, Imran Hashim, Tim Minvielle +1 more | 2014-09-30 |
| 8835890 | ReRAM cells including TaXSiYN embedded resistors | Chien-Lan Hsueh, Mihir Tendulkar | 2014-09-16 |
| 8802492 | Method for forming resistive switching memory elements | Jinhong Tong, Imran Hashim, Vidyut Gopal | 2014-08-12 |
| 8791445 | Interfacial oxide used as switching layer in a nonvolatile resistive memory element | Tony P. Chiang, Ryan Clarke, Vidyut Gopal, Imran Hashim, Robert A. Huertas +1 more | 2014-07-29 |
| 8741698 | Atomic layer deposition of zirconium oxide for forming resistive-switching materials | Jinhong Tong, Vidyut Gopal, Imran Hashim, Albert S. Lee | 2014-06-03 |