| 10923023 |
Stacked hybrid micro LED pixel architecture |
Andreas Bibl, Xia Li, John A. Higginson, Vaibhav D. Patel, Kapil V. Sakariya +2 more |
2021-02-16 |
|
| 10497682 |
Backplane LED integration and functionalization structures |
Vaibhav D. Patel, Hsin-Hua Hu, Kapil V. Sakariya, Ralph Kauffman |
2019-12-03 |
$109,496,000 |
| 9543516 |
Method for forming a doped metal oxide for use in resistive switching memory elements |
Jinhong Tong, Randall J. Higuchi, Vidyut Gopal |
2017-01-10 |
$761,000 |
| 9444047 |
Embedded nonvolatile memory elements having resistive switching characteristics |
Tony P. Chiang, Vidyut Gopal, Yun Wang |
2016-09-13 |
$237,000 |
| 9397141 |
Current selector for non-volatile memory in a cross bar array based on defect and band engineering metal-dielectric-metal stacks |
Venkat Ananthan, Tony P. Chiang, Prashant B. Phatak |
2016-07-19 |
$288,000 |
| 9305791 |
High productivity combinatorial workflow to screen and design chalcogenide materials as non volatile memory current selector |
— |
2016-04-05 |
$731,000 |
| 9299926 |
Nonvolatile memory device using a tunnel oxide layer and oxygen blocking layer as a current limiter element |
Mihir Tendulkar, Yun Wang, Tim Minvielle, Takeshi Yamaguchi |
2016-03-29 |
$169,000 |
| 9299928 |
Nonvolatile memory device having a current limiting element |
Yun Wang, Tony P. Chiang |
2016-03-29 |
$169,000 |
| 9281357 |
DRAM MIM capacitor using non-noble electrodes |
Hanhong Chen, David Chi, Mitsuhiro Horikawa, Sandra G. Malhotra |
2016-03-08 |
$504,000 |
| 9275913 |
Memory arrays for both good data retention and low power operation |
Yun Wang |
2016-03-01 |
$206,000 |
| 9246096 |
Atomic layer deposition of metal oxides for memory applications |
Zhendong Hong, Vidyut Gopal, Randall J. Higuchi, Tim Minvielle, Hieu Pham +1 more |
2016-01-26 |
$68,000 |
| 9246097 |
Diffusion barrier layer for resistive random access memory cells |
Yun Wang |
2016-01-26 |
$68,000 |
| 9184383 |
Nonvolatile memory device having an electrode interface coupling region |
Yun Wang, Tony P. Chiang |
2015-11-10 |
$586,000 |
| 9178006 |
Methods to improve electrical performance of ZrO2 based high-K dielectric materials for DRAM applications |
Xiangxin Rui, Hanhong Chen, Naonori Fujiwara, Kenichi Koyanagi |
2015-11-03 |
$43,000 |
| 9178146 |
Resistive-switching memory elements having improved switching characteristics |
Ronald J. Kuse, Tony P. Chiang |
2015-11-03 |
$43,000 |
| 9177998 |
Method of forming an asymmetric MIMCAP or a Schottky device as a selector element for a cross-bar memory array |
Venkat Ananthan, Prashant B. Phatak |
2015-11-03 |
$43,000 |
| 9178147 |
Resistive-switching memory elements having improved switching characteristics |
Ronald J. Kuse, Tony P. Chiang |
2015-11-03 |
$43,000 |
| 9178148 |
Resistive random access memory cell having three or more resistive states |
Ryan Clarke, Nan Lu, Tim Minvielle, Takeshi Yamaguchi |
2015-11-03 |
$43,000 |
| 9178151 |
Work function tailoring for nonvolatile memory applications |
Yun Wang, Tony P. Chiang |
2015-11-03 |
$43,000 |
| 9130165 |
Atomic layer deposition of metal oxide materials for memory applications |
Yun Wang, Tony P. Chiang, Vidyut Gopal, Dipankar Pramanik |
2015-09-08 |
$391,000 |
| 9129894 |
Embedded nonvolatile memory elements having resistive switching characteristics |
Tony P. Chiang, Vidyut Gopal, Yun Wang |
2015-09-08 |
$391,000 |
| 9099430 |
ZrO-based high K dielectric stack for logic decoupling capacitor or embedded DRAM |
Xiangxin Rui |
2015-08-04 |
$323,000 |
| 9087978 |
Transition metal oxide bilayers |
Hieu Pham, Vidyut Gopal, Tim Minvielle, Yun Wang, Takeshi Yamaguchi +1 more |
2015-07-21 |
|
| 9054307 |
Resistive random access memory cells having metal alloy current limiting layers |
Yun Wang, Tony P. Chiang, Tim Minvielle, Dipankar Pramanik, Takeshi Yamaguchi |
2015-06-09 |
|
| 9012881 |
Resistive-switching memory elements having improved switching characteristics |
Ronald J. Kuse, Tony P. Chiang |
2015-04-21 |
$141,000 |
