Issued Patents All Time
Showing 25 most recent of 108 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 10923023 | Stacked hybrid micro LED pixel architecture | Andreas Bibl, Xia Li, John A. Higginson, Vaibhav D. Patel, Kapil V. Sakariya +2 more | 2021-02-16 |
| 10497682 | Backplane LED integration and functionalization structures | Vaibhav D. Patel, Hsin-Hua Hu, Kapil V. Sakariya, Ralph Kauffman | 2019-12-03 |
| 9543516 | Method for forming a doped metal oxide for use in resistive switching memory elements | Jinhong Tong, Randall J. Higuchi, Vidyut Gopal | 2017-01-10 |
| 9444047 | Embedded nonvolatile memory elements having resistive switching characteristics | Tony P. Chiang, Vidyut Gopal, Yun Wang | 2016-09-13 |
| 9397141 | Current selector for non-volatile memory in a cross bar array based on defect and band engineering metal-dielectric-metal stacks | Venkat Ananthan, Tony P. Chiang, Prashant B. Phatak | 2016-07-19 |
| 9305791 | High productivity combinatorial workflow to screen and design chalcogenide materials as non volatile memory current selector | — | 2016-04-05 |
| 9299926 | Nonvolatile memory device using a tunnel oxide layer and oxygen blocking layer as a current limiter element | Mihir Tendulkar, Yun Wang, Tim Minvielle, Takeshi Yamaguchi | 2016-03-29 |
| 9299928 | Nonvolatile memory device having a current limiting element | Yun Wang, Tony P. Chiang | 2016-03-29 |
| 9281357 | DRAM MIM capacitor using non-noble electrodes | Hanhong Chen, David Chi, Mitsuhiro Horikawa, Sandra G. Malhotra | 2016-03-08 |
| 9275913 | Memory arrays for both good data retention and low power operation | Yun Wang | 2016-03-01 |
| 9246096 | Atomic layer deposition of metal oxides for memory applications | Zhendong Hong, Vidyut Gopal, Randall J. Higuchi, Tim Minvielle, Hieu Pham +1 more | 2016-01-26 |
| 9246097 | Diffusion barrier layer for resistive random access memory cells | Yun Wang | 2016-01-26 |
| 9184383 | Nonvolatile memory device having an electrode interface coupling region | Yun Wang, Tony P. Chiang | 2015-11-10 |
| 9178006 | Methods to improve electrical performance of ZrO2 based high-K dielectric materials for DRAM applications | Xiangxin Rui, Hanhong Chen, Naonori Fujiwara, Kenichi Koyanagi | 2015-11-03 |
| 9178146 | Resistive-switching memory elements having improved switching characteristics | Ronald J. Kuse, Tony P. Chiang | 2015-11-03 |
| 9177998 | Method of forming an asymmetric MIMCAP or a Schottky device as a selector element for a cross-bar memory array | Venkat Ananthan, Prashant B. Phatak | 2015-11-03 |
| 9178147 | Resistive-switching memory elements having improved switching characteristics | Ronald J. Kuse, Tony P. Chiang | 2015-11-03 |
| 9178148 | Resistive random access memory cell having three or more resistive states | Ryan Clarke, Nan Lu, Tim Minvielle, Takeshi Yamaguchi | 2015-11-03 |
| 9178151 | Work function tailoring for nonvolatile memory applications | Yun Wang, Tony P. Chiang | 2015-11-03 |
| 9130165 | Atomic layer deposition of metal oxide materials for memory applications | Yun Wang, Tony P. Chiang, Vidyut Gopal, Dipankar Pramanik | 2015-09-08 |
| 9129894 | Embedded nonvolatile memory elements having resistive switching characteristics | Tony P. Chiang, Vidyut Gopal, Yun Wang | 2015-09-08 |
| 9099430 | ZrO-based high K dielectric stack for logic decoupling capacitor or embedded DRAM | Xiangxin Rui | 2015-08-04 |
| 9087978 | Transition metal oxide bilayers | Hieu Pham, Vidyut Gopal, Tim Minvielle, Yun Wang, Takeshi Yamaguchi +1 more | 2015-07-21 |
| 9054307 | Resistive random access memory cells having metal alloy current limiting layers | Yun Wang, Tony P. Chiang, Tim Minvielle, Dipankar Pramanik, Takeshi Yamaguchi | 2015-06-09 |
| 9012881 | Resistive-switching memory elements having improved switching characteristics | Ronald J. Kuse, Tony P. Chiang | 2015-04-21 |