Issued Patents All Time
Showing 1–21 of 21 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 9299926 | Nonvolatile memory device using a tunnel oxide layer and oxygen blocking layer as a current limiter element | Imran Hashim, Yun Wang, Tim Minvielle, Takeshi Yamaguchi | 2016-03-29 |
| 9276210 | Conductive barriers for ternary nitride thin-film resistors | — | 2016-03-01 |
| 9243321 | Ternary metal nitride formation by annealing constituent layers | — | 2016-01-26 |
| 9231203 | Doped narrow band gap nitrides for embedded resistors of resistive random access memory cells | Milind Weling | 2016-01-05 |
| 9178142 | Doped electrodes used to inhibit oxygen loss in ReRAM device | — | 2015-11-03 |
| 9030018 | Test vehicles for evaluating resistance of thin layers | David Chi | 2015-05-12 |
| 9006696 | Metal aluminum nitride embedded resistors for resistive random memory access cells | Randall J. Higuchi, Chien-Lan Hsueh | 2015-04-14 |
| 8981329 | Method of forming anneal-resistant embedded resistor for non-volatile memory application | David Chi | 2015-03-17 |
| 8969129 | ReRAM cells including TaXSiYN embedded resistors | Chien-Lan Hsueh, Randall J. Higuchi | 2015-03-03 |
| 8921154 | Method of forming anneal-resistant embedded resistor for non-volatile memory application | David Chi | 2014-12-30 |
| 8901530 | Nonvolatile memory device using a tunnel oxide as a passive current steering element | Imran Hashim, Yun Wang | 2014-12-02 |
| 8895949 | Nonvolatile memory device using a varistor as a current limiter element | Imran Hashim, Yun Wang | 2014-11-25 |
| 8860002 | Limited maximum fields of electrode-switching layer interfaces in Re-RAM cells | Imran Hashim, Tim Minvielle, Yun Wang, Takeshi Yamaguchi | 2014-10-14 |
| 8853661 | Metal aluminum nitride embedded resistors for resistive random memory access cells | Randall J. Higuchi, Chien-Lan Hsueh | 2014-10-07 |
| 8847187 | Method of forming anneal-resistant embedded resistor for non-volatile memory application | David Chi | 2014-09-30 |
| 8835890 | ReRAM cells including TaXSiYN embedded resistors | Chien-Lan Hsueh, Randall J. Higuchi | 2014-09-16 |
| 8796103 | Forming nonvolatile memory elements by diffusing oxygen into electrodes | Tim Minvielle, Yun Wang, Takeshi Yamaguchi | 2014-08-05 |
| 8735864 | Nonvolatile memory device using a tunnel nitride as a current limiter element | Tim Minvielle, Yun Wang, Takeshi Yamaguchi | 2014-05-27 |
| 8698119 | Nonvolatile memory device using a tunnel oxide as a current limiter element | Imran Hashim, Yun Wang | 2014-04-15 |
| 8686386 | Nonvolatile memory device using a varistor as a current limiter element | Imran Hashim, Yun Wang | 2014-04-01 |
| 8552413 | Nonvolatile memory device using a tunnel nitride as a current limiter element | Tim Minvielle, Yun Wang, Takeshi Yamaguchi | 2013-10-08 |