Patent Leaderboard
USPTO Patent Rankings Data through Dec 31, 2025
Home › ReRAM cells including TaXSiYN embedded resistors

ReRAM cells including TaXSiYN embedded resistors

US Patent 8969129 · Granted Mar 3, 2015

Estimated economic value: $309,000 ⓘ

Assignee

Inventors

View full patent text on Google Patents →

More Patents by These Inventors

Multi-layer deposition system and process2020
Hybrid parylene-metal oxide layers for corrosion resistant coatings2020
Method for forming a doped metal oxide for use in resistive switching memory ele2017
Doped oxide dielectrics for resistive random access memory cells2016
Nonvolatile memory device using a tunnel oxide layer and oxygen blocking layer a2016
Resistive switching layers including Hf-Al-O2016
Resistive switching layers including Hf-Al-O2016
Conductive barriers for ternary nitride thin-film resistors2016
High productivity combinatorial processing using pressure-controlled one-way val2016
Confined defect profiling within resistive random memory access cells2016
Ternary metal nitride formation by annealing constituent layers2016
Atomic layer deposition of metal oxides for memory applications2016