Patent Leaderboard
USPTO Patent Rankings Data through Dec 31, 2025
Home › Doped narrow band gap nitrides for embedded resistors of resistive random access memory cells

Doped narrow band gap nitrides for embedded resistors of resistive random access memory cells

US Patent 9231203 · Granted Jan 5, 2016

Estimated economic value: $1,461,000 ⓘ

Assignee

Inventors

View full patent text on Google Patents →

More Patents by These Inventors

Nonvolatile resistive memory element with an oxygen-gettering layer2016
Nonvolatile memory device using a tunnel oxide layer and oxygen blocking layer a2016
Conductive barriers for ternary nitride thin-film resistors2016
Ternary metal nitride formation by annealing constituent layers2016
Stacked bi-layer as the low power switchable RRAM2016
Current-limiting electrodes2015
Doped electrodes used to inhibit oxygen loss in ReRAM device2015
Test vehicles for evaluating resistance of thin layers2015
Metal aluminum nitride embedded resistors for resistive random memory access cel2015
Method of forming anneal-resistant embedded resistor for non-volatile memory app2015
Nonvolatile resistive memory element with an oxygen-gettering layer2015
ReRAM cells including TaXSiYN embedded resistors2015