| 9884123 |
Ligand-targeted molecules and methods thereof |
Shiladitya Sengupta, Sazid Hussain, Monideepa Roy, Seikh Samad Hossain |
2018-02-06 |
|
| 9593414 |
Hydrogenated amorphous silicon dielectric for superconducting devices |
Sergey Barabash, Chris Kirby, Andrew Steinbach |
2017-03-14 |
$717,000 |
| 9472423 |
Method for suppressing lattice defects in a semiconductor substrate |
Victor Moroz |
2016-10-18 |
$6,230,000 |
| 9465897 |
Analysis of stress impact on transistor performance |
Victor Moroz |
2016-10-11 |
$11,062,000 |
| 9455073 |
Superconducting circuits with reduced microwave absorption |
Sergey Barabash, Andrew Steinbach, Chris Kirby |
2016-09-27 |
$236,000 |
| 9431569 |
Zinc blende cadmium—manganese—telluride with reduced hole compensation effects and methods for forming the same |
Sergey Barabash, Amir Bayati, Zhi-Wen Sun |
2016-08-30 |
$37,844,000 |
| 9343673 |
Method for forming metal oxides and silicides in a memory device |
Tony P. Chiang, Tim Minvielle, Takeshi Yamaguchi |
2016-05-17 |
$237,000 |
| 9337238 |
Photo-induced MSM stack |
Kevin Kashefi, Ashish Bodke, Mark Clark, Prashant B. Phatak |
2016-05-10 |
$627,000 |
| 9331279 |
Creating an embedded ReRAM memory from a high-k metal gate transistor structure |
Tony P. Chiang, David E. Lazovsky |
2016-05-03 |
$352,000 |
| 9331276 |
Nonvolatile resistive memory element with an oxygen-gettering layer |
Tony P. Chiang, Milind Weling |
2016-05-03 |
$352,000 |
| 9297067 |
Fluorine passivation of dielectric for superconducting electronics |
Andrew Steinbach |
2016-03-29 |
$169,000 |
| 9292627 |
System and method for modifying a data set of a photomask |
Michiel Victor Paul Kruger, Roy Prasad, Abdurrahman Sezginer |
2016-03-22 |
$8,333,000 |
| 9275727 |
Multi-level memory array having resistive elements for multi-bit data storage |
David E. Lazovsky, Tim Minvielle, Takeshi Yamaguchi |
2016-03-01 |
$206,000 |
| 9246092 |
Tunneling barrier creation in MSM stack as a selector device for non-volatile memory application |
Ashish Bodke, Mark Clark, Kevin Kashefi, Prashant B. Phatak |
2016-01-26 |
$68,000 |
| 9245941 |
Electrode for low-leakage devices |
Sergey Barabash, Mankoo Lee |
2016-01-26 |
$68,000 |
| 9240236 |
Switching conditions for resistive random access memory cells |
Sergey Barabash |
2016-01-19 |
$1,237,000 |
| 9222170 |
Deposition of rutile films with very high dielectric constant |
Sergey Barabash |
2015-12-29 |
$129,000 |
| 9224799 |
Capacitors including inner and outer electrodes |
Sergey Barabash |
2015-12-29 |
$129,000 |
| 9189580 |
Analysis of stress impact on transistor performance |
Victor Moroz |
2015-11-17 |
$4,921,000 |
| 9177996 |
Method for forming ReRAM chips operating at low operating temperatures |
Tony P. Chiang |
2015-11-03 |
$43,000 |
| 9177916 |
Amorphous silicon doped with fluorine for selectors of resistive random access memory cells |
Sergey Barabash |
2015-11-03 |
$43,000 |
| 9178011 |
Deposition of anisotropic dielectric layers orientationally matched to the physically separated substrate |
Sergey Barabash |
2015-11-03 |
$43,000 |
| 9141737 |
Analysis of stress impact on transistor performance |
Victor Moroz |
2015-09-22 |
$7,452,000 |
| 9130165 |
Atomic layer deposition of metal oxide materials for memory applications |
Yun Wang, Tony P. Chiang, Vidyut Gopal, Imran Hashim |
2015-09-08 |
$391,000 |
| 9105704 |
Method of depositing films with narrow-band conductive properties |
Sergey Barabash |
2015-08-11 |
$190,000 |
