Issued Patents All Time
Showing 26–50 of 108 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 9006026 | Atomic layer deposition of metal oxides for memory applications | Zhendong Hong, Vidyut Gopal, Randall J. Higuchi, Tim Minvielle, Hieu Pham +1 more | 2015-04-14 |
| 9006023 | Diffusion barrier layer for resistive random access memory cells | Yun Wang | 2015-04-14 |
| 9001554 | Resistive random access memory cell having three or more resistive states | Ryan Clarke, Nan Lu, Tim Minvielle, Takeshi Yamaguchi | 2015-04-07 |
| 8995172 | Nonvolatile memory device having a current limiting element | Yun Wang, Tony P. Chiang | 2015-03-31 |
| 8987697 | Transition metal oxide bilayers | Hieu Pham, Vidyut Gopal, Tim Minvielle, Yun Wang, Takeshi Yamaguchi +1 more | 2015-03-24 |
| 8975727 | Memory cell having an integrated two-terminal current limiting resistor | Yun Wang, Tony P. Chiang, Tim Minvielle, Dipankar Pramanik, Takeshi Yamaguchi | 2015-03-10 |
| 8969169 | DRAM MIM capacitor using non-noble electrodes | Hanhong Chen, David Chi, Mitsuhiro Horikawa, Sandra G. Malhotra | 2015-03-03 |
| 8912524 | Defect gradient to boost nonvolatile memory performance | Yun Wang, Tony P. Chiang | 2014-12-16 |
| 8906736 | Multifunctional electrode | Hieu Pham, Vidyut Gopal, Tim Minvielle, Dipankar Pramanik, Yun Wang +2 more | 2014-12-09 |
| 8901530 | Nonvolatile memory device using a tunnel oxide as a passive current steering element | Mihir Tendulkar, Yun Wang | 2014-12-02 |
| 8901708 | Yttrium and titanium high-k dielectric films | Hanhong Chen, Tony P. Chiang, Indranil De, Nobumichi Fuchigami, Edward Haywood +3 more | 2014-12-02 |
| 8900418 | Yttrium and titanium high-k dielectric films | Hanhong Chen, Tony P. Chiang, Indranil De, Nobi Fuchigami, Edward Haywood +3 more | 2014-12-02 |
| 8900422 | Yttrium and titanium high-K dielectric film | Indranil De, Tony P. Chiang, Edward Haywood, Hanhong Chen, Nobi Fuchigami +3 more | 2014-12-02 |
| 8895949 | Nonvolatile memory device using a varistor as a current limiter element | Mihir Tendulkar, Yun Wang | 2014-11-25 |
| 8883655 | Atomic layer deposition of metal oxide materials for memory applications | Yun Wang, Tony P. Chiang, Vidyut Gopal, Dipankar Pramanik | 2014-11-11 |
| 8878152 | Nonvolatile resistive memory element with an integrated oxygen isolation structure | Yun Wang, Tony P. Chiang, Dipankar Pramanik | 2014-11-04 |
| 8871621 | Method of forming an asymmetric MIMCAP or a schottky device as a selector element for a cross-bar memory array | Venkat Ananthan, Prashant B. Phatak | 2014-10-28 |
| 8871564 | Diffusion barrier layer for resistive random access memory cells | Yun Wang | 2014-10-28 |
| 8866121 | Current-limiting layer and a current-reducing layer in a memory device | Yun Wang, Tony P. Chiang | 2014-10-21 |
| 8860002 | Limited maximum fields of electrode-switching layer interfaces in Re-RAM cells | Mihir Tendulkar, Tim Minvielle, Yun Wang, Takeshi Yamaguchi | 2014-10-14 |
| 8859299 | HPC workflow for rapid screening of materials and stacks for STT-RAM | — | 2014-10-14 |
| 8859328 | Multifunctional electrode | Hieu Pham, Vidyut Gopal, Tim Minvielle, Dipankar Pramanik, Yun Wang +2 more | 2014-10-14 |
| 8853099 | Nonvolatile resistive memory element with a metal nitride containing switching layer | Yun Wang, Tony P. Chiang, Tim Minvielle, Takeshi Yamaguchi | 2014-10-07 |
| 8846443 | Atomic layer deposition of metal oxides for memory applications | Zhendong Hong, Hieu Pham, Randall J. Higuchi, Vidyut Gopal, Tim Minvielle +1 more | 2014-09-30 |
| 8828821 | Fabrication of semiconductor stacks with ruthenium-based materials | Hanhong Chen, Nobumichi Fuchigami, Pragati Kumar, Sandra G. Malhotra, Sunil Shanker | 2014-09-09 |