Issued Patents All Time
Showing 1–17 of 17 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 9281357 | DRAM MIM capacitor using non-noble electrodes | Hanhong Chen, David Chi, Imran Hashim, Sandra G. Malhotra | 2016-03-08 |
| 8969169 | DRAM MIM capacitor using non-noble electrodes | Hanhong Chen, David Chi, Imran Hashim, Sandra G. Malhotra | 2015-03-03 |
| 8815695 | Methods to improve leakage for ZrO2 based high K MIM capacitor | Xiangxin Rui, Hiroyuki Ode, Karthik Ramani | 2014-08-26 |
| 8748325 | Method of manufacturing semiconductor device | Hiroyuki Ode, Masashi Haruki, Shigeki Takishima, Shinichi Kihara | 2014-06-10 |
| 8546236 | High performance dielectric stack for DRAM capacitor | Sandra G. Malhotra, Hanhong Chen, Wim Deweerd, Kenichi Koyanagi, Hiroyuki Ode +1 more | 2013-10-01 |
| 8541283 | High performance dielectric stack for DRAM capacitor | Sandra G. Malhotra, Hanhong Chen, Wim Deweerd, Kenichi Koyanagi, Hiroyuki Ode +1 more | 2013-09-24 |
| 8476141 | High performance dielectric stack for DRAM capacitor | Sandra G. Malhotra, Hanhong Chen, Wim Deweerd, Kenichi Koyanagi, Hiroyuki Ode +1 more | 2013-07-02 |
| 8415227 | High performance dielectric stack for DRAM capacitor | Sandra G. Malhotra, Wim Deweerd, Hanhong Chen, Xiangxin Rui, Hiroyuki Ode +1 more | 2013-04-09 |
| 8026184 | Semiconductor device and method of manufacturing the same | — | 2011-09-27 |
| 7790613 | Semiconductor device and method of manufacturing the same | — | 2010-09-07 |
| 7224016 | Memory with memory cells that include a MIM type capacitor with a lower electrode made for reduced resistance at an interface with a metal film | Yoshitaka Nakamura, Hidekazu Goto, Isamu Asano, Keiji Kuroki, Hiroshi Sakuma +2 more | 2007-05-29 |
| 6562733 | Semiconductor device manufacturing method | — | 2003-05-13 |
| 6372611 | Semiconductor manufacturing method including gettering of metal impurities | — | 2002-04-16 |
| 6300680 | Semiconductor substrate and manufacturing method thereof | Masahito Watanabe | 2001-10-09 |
| 6046095 | Semiconductor substrate having polysilicon layers and fabrication process of semiconductor device using the same | — | 2000-04-04 |
| 5973386 | Semiconductor substrate having silicon oxide layers formed between polysilicon layers | — | 1999-10-26 |
| 5062095 | Actuator and method of manufacturing thereof | Hiroshi Ito, Tsugio Ide, Michio Yanagisawa, Tatsuya Shimoda, Koji Akioka | 1991-10-29 |