Issued Patents All Time
Showing 25 most recent of 41 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 9224878 | High work function, manufacturable top electrode | Sandra G. Malhotra, Hanhong Chen, Arthur Gevondyan, Hiroyuki Ode | 2015-12-29 |
| 9178010 | Adsorption site blocking method for co-doping ALD films | Sandra G. Malhotra, Hanhong Chen, Toshiyuki Hirota, Hiroyuki Ode | 2015-11-03 |
| 8975633 | Molybdenum oxide top electrode for DRAM capacitors | Hanhong Chen, Hiroyuki Ode | 2015-03-10 |
| 8940463 | Method and apparatus for EUV mask having diffusion barrier | — | 2015-01-27 |
| 8936889 | Method and apparatus for EUV mask having diffusion barrier | — | 2015-01-20 |
| 8906812 | Wet etch and clean chemistries for MoOx | Kim Van Berkel, Hiroyuki Ode | 2014-12-09 |
| 8878269 | Band gap improvement in DRAM capacitors | Hanhong Chen, Sandra G. Malhotra, Hiroyuki Ode | 2014-11-04 |
| 8853049 | Single-sided non-noble metal electrode hybrid MIM stack for DRAM devices | Hanhong Chen, Hiroyuki Ode, Xiangxin Rui | 2014-10-07 |
| 8847397 | High work function, manufacturable top electrode | Sandra G. Malhotra, Hanhong Chen, Arthur Gevondyan, Hiroyuki Ode | 2014-09-30 |
| 8836002 | Method for fabricating a DRAM capacitor | Karthik Ramani, Hanhong Chen, Nobumichi Fuchigami, Hiroyuki Ode | 2014-09-16 |
| 8813325 | Method for fabricating a DRAM capacitor | Karthik Ramani, Nobumichi Fuchigami, Hanhong Chen, Hiroyuki Ode | 2014-08-26 |
| 8815677 | Method of processing MIM capacitors to reduce leakage current | Hanhong Chen, Xiangxin Rui, Sandra G. Malhotra, Hiroyuki Ode | 2014-08-26 |
| 8772123 | Band gap improvement in DRAM capacitors | Hanhong Chen, Sandra G. Malhotra, Hiroyuki Ode | 2014-07-08 |
| 8765569 | Molybdenum oxide top electrode for DRAM capacitors | Hanhong Chen, Hiroyuki Ode | 2014-07-01 |
| 8765570 | Manufacturable high-k DRAM MIM capacitor structure | Sandra G. Malhotra, Hiroyuki Ode | 2014-07-01 |
| 8741712 | Leakage reduction in DRAM MIM capacitors | Tony P. Chiang, Sandra G. Malhotra | 2014-06-03 |
| 8722504 | Interfacial layer for DRAM capacitor | Hiroyuki Ode | 2014-05-13 |
| 8679939 | Manufacturable high-k DRAM MIM capacitor structure | Sandra G. Malhotra, Hiroyuki Ode | 2014-03-25 |
| 8654560 | Variable resistance memory with a select device | Yun Wang, Prashant B. Phatak, Tony P. Chiang | 2014-02-18 |
| 8652927 | Integration of non-noble DRAM electrode | Sandra G. Malhotra, Hanhong Chen, Edward Haywood, Hiroyuki Ode, Gerald Richardson | 2014-02-18 |
| 8647960 | Anneal to minimize leakage current in DRAM capacitor | Hiroyuki Ode | 2014-02-11 |
| 8647943 | Enhanced non-noble electrode layers for DRAM capacitor cell | Hanhong Chen, Edward Haywood, Sandra G. Malhotra, Hiroyuki Ode | 2014-02-11 |
| 8581318 | Enhanced non-noble electrode layers for DRAM capacitor cell | Hanhong Chen, Edward Haywood, Sandra G. Malhotra, Hiroyuki Ode | 2013-11-12 |
| 8574999 | Blocking layers for leakage current reduction in DRAM devices | Sandra G. Malhotra, Hanhong Chen, Hiroyuki Ode | 2013-11-05 |
| 8574983 | Method for fabricating a DRAM capacitor having increased thermal and chemical stability | Karthik Ramani, Hiroyuki Ode | 2013-11-05 |