| 9224878 |
High work function, manufacturable top electrode |
Sandra G. Malhotra, Hanhong Chen, Arthur Gevondyan, Hiroyuki Ode |
2015-12-29 |
$129,000 |
| 9178010 |
Adsorption site blocking method for co-doping ALD films |
Sandra G. Malhotra, Hanhong Chen, Toshiyuki Hirota, Hiroyuki Ode |
2015-11-03 |
$43,000 |
| 8975633 |
Molybdenum oxide top electrode for DRAM capacitors |
Hanhong Chen, Hiroyuki Ode |
2015-03-10 |
|
| 8940463 |
Method and apparatus for EUV mask having diffusion barrier |
— |
2015-01-27 |
$1,321,000 |
| 8936889 |
Method and apparatus for EUV mask having diffusion barrier |
— |
2015-01-20 |
$1,331,000 |
| 8906812 |
Wet etch and clean chemistries for MoOx |
Kim Van Berkel, Hiroyuki Ode |
2014-12-09 |
|
| 8878269 |
Band gap improvement in DRAM capacitors |
Hanhong Chen, Sandra G. Malhotra, Hiroyuki Ode |
2014-11-04 |
$574,000 |
| 8853049 |
Single-sided non-noble metal electrode hybrid MIM stack for DRAM devices |
Hanhong Chen, Hiroyuki Ode, Xiangxin Rui |
2014-10-07 |
|
| 8847397 |
High work function, manufacturable top electrode |
Sandra G. Malhotra, Hanhong Chen, Arthur Gevondyan, Hiroyuki Ode |
2014-09-30 |
$908,000 |
| 8836002 |
Method for fabricating a DRAM capacitor |
Karthik Ramani, Hanhong Chen, Nobumichi Fuchigami, Hiroyuki Ode |
2014-09-16 |
$215,000 |
| 8813325 |
Method for fabricating a DRAM capacitor |
Karthik Ramani, Nobumichi Fuchigami, Hanhong Chen, Hiroyuki Ode |
2014-08-26 |
|
| 8815677 |
Method of processing MIM capacitors to reduce leakage current |
Hanhong Chen, Xiangxin Rui, Sandra G. Malhotra, Hiroyuki Ode |
2014-08-26 |
|
| 8772123 |
Band gap improvement in DRAM capacitors |
Hanhong Chen, Sandra G. Malhotra, Hiroyuki Ode |
2014-07-08 |
|
| 8765569 |
Molybdenum oxide top electrode for DRAM capacitors |
Hanhong Chen, Hiroyuki Ode |
2014-07-01 |
|
| 8765570 |
Manufacturable high-k DRAM MIM capacitor structure |
Sandra G. Malhotra, Hiroyuki Ode |
2014-07-01 |
$316,000 |
| 8741712 |
Leakage reduction in DRAM MIM capacitors |
Tony P. Chiang, Sandra G. Malhotra |
2014-06-03 |
|
| 8722504 |
Interfacial layer for DRAM capacitor |
Hiroyuki Ode |
2014-05-13 |
|
| 8679939 |
Manufacturable high-k DRAM MIM capacitor structure |
Sandra G. Malhotra, Hiroyuki Ode |
2014-03-25 |
$396,000 |
| 8654560 |
Variable resistance memory with a select device |
Yun Wang, Prashant B. Phatak, Tony P. Chiang |
2014-02-18 |
$404,000 |
| 8652927 |
Integration of non-noble DRAM electrode |
Sandra G. Malhotra, Hanhong Chen, Edward Haywood, Hiroyuki Ode, Gerald Richardson |
2014-02-18 |
$404,000 |
| 8647960 |
Anneal to minimize leakage current in DRAM capacitor |
Hiroyuki Ode |
2014-02-11 |
|
| 8647943 |
Enhanced non-noble electrode layers for DRAM capacitor cell |
Hanhong Chen, Edward Haywood, Sandra G. Malhotra, Hiroyuki Ode |
2014-02-11 |
|
| 8581318 |
Enhanced non-noble electrode layers for DRAM capacitor cell |
Hanhong Chen, Edward Haywood, Sandra G. Malhotra, Hiroyuki Ode |
2013-11-12 |
$379,000 |
| 8574999 |
Blocking layers for leakage current reduction in DRAM devices |
Sandra G. Malhotra, Hanhong Chen, Hiroyuki Ode |
2013-11-05 |
|
| 8574983 |
Method for fabricating a DRAM capacitor having increased thermal and chemical stability |
Karthik Ramani, Hiroyuki Ode |
2013-11-05 |
|