GW

Guy Wicker

OV Ovonyx: 22 patents #6 of 96Top 7%
IN Intel: 17 patents #2,418 of 30,777Top 8%
ED Energy Conversion Devices: 11 patents #15 of 231Top 7%
SS Stmicroelectronics Sa: 4 patents #1,171 of 4,662Top 30%
Micron: 2 patents #3,728 of 6,345Top 60%
ST Sandisk Technologies: 1 patents #1,320 of 2,224Top 60%
OS Ovonic Imaging Systems: 1 patents #13 of 25Top 55%
EM Elpida Memory: 1 patents #419 of 692Top 65%
Overall (All Time): #41,984 of 4,157,543Top 2%
58
Patents All Time

Issued Patents All Time

Showing 25 most recent of 58 patents

Patent #TitleCo-InventorsDate
10147876 Phase change memory electrode with multiple thermal interfaces Lidu Huang, Mac D. Apodaca, Toshiki Hirano, Ailian Zhao, Federico Nardi 2018-12-04
9343676 Heating phase change material Fabio Pellizzer, Enrico Varesi, Agostino Pirovano 2016-05-17
8889527 Phase change memory and method therefor 2014-11-18
8653495 Heating phase change material Fabio Pellizzer, Enrico Varesi, Agostino Pirovano 2014-02-18
8431922 Lateral phase change memory Richard K. Dodge 2013-04-30
8379439 Programmable matrix array with chalcogenide material Tyler Lowrey, Ward Parkinson 2013-02-19
8344348 Memory device Wolodymyr Czubatyj 2013-01-01
8217379 Arsenic-containing variable resistance materials Carl Schell, Jon Maimon 2012-07-10
8211742 Lateral phase change memory Richard K. Dodge 2012-07-03
8134860 Shunted phase change memory 2012-03-13
8120940 Programmable resistance memory 2012-02-21
8062921 Phase change memories with improved programming characteristics Carl Schell, Sergey Kostylev, Stephen J. Hudgens 2011-11-22
7916514 Shunted phase change memory 2011-03-29
7864567 Programming a normally single phase chalcogenide material for use as a memory of FPLA George Andrew Gordon, Ward Parkinson, John M. Peters, Tyler Lowrey, Stanford R. Ovshinsky +2 more 2011-01-04
7839674 Programmable matrix array with chalcogenide material Tyler Lowrey, Ward Parkinson 2010-11-23
7816660 Lateral phase change memory Richard K. Dodge 2010-10-19
7786462 Chalcogenide devices exhibiting stable operation from the as-fabricated state Sergey Kostylev, Tyler Lowrey, Wolodymyr Czubatyj 2010-08-31
7663907 Die customization using programmable resistance memory elements Tyler Lowrey, Edward J. Spall 2010-02-16
7649191 Forming a carbon layer between phase change layers of a phase change memory Wolodymyr Czubatyj, Sergey Kostylev, Tyler Lowrey 2010-01-19
7646630 Programmable matrix array with chalcogenide material Tyler Lowrey, Ward Parkinson 2010-01-12
7589364 Electrically rewritable non-volatile memory element and method of manufacturing the same Isamu Asano, Natsuki Sato, Tyler Lowrey, Wolodymyr Czubatyj, Stephen J. Hudgens 2009-09-15
7579210 Planar segmented contact 2009-08-25
7525117 Chalcogenide devices and materials having reduced germanium or telluruim content Sergey Kostylev, Tyler Lowrey, Wolodymyr Czubatyj 2009-04-28
7504675 Phase change memories with improved programming characteristics Carl Schell, Sergey Kostylev, Stephen J. Hudgens 2009-03-17
7499315 Programmable matrix array with chalcogenide material Tyler Lowrey, Ward Parkinson 2009-03-03