| 10147876 |
Phase change memory electrode with multiple thermal interfaces |
Lidu Huang, Mac D. Apodaca, Toshiki Hirano, Ailian Zhao, Federico Nardi |
2018-12-04 |
|
| 9343676 |
Heating phase change material |
Fabio Pellizzer, Enrico Varesi, Agostino Pirovano |
2016-05-17 |
$4,120,000 |
| 8889527 |
Phase change memory and method therefor |
— |
2014-11-18 |
$17,555,000 |
| 8653495 |
Heating phase change material |
Fabio Pellizzer, Enrico Varesi, Agostino Pirovano |
2014-02-18 |
$12,380,000 |
| 8431922 |
Lateral phase change memory |
Richard K. Dodge |
2013-04-30 |
$4,502,000 |
| 8379439 |
Programmable matrix array with chalcogenide material |
Tyler Lowrey, Ward Parkinson |
2013-02-19 |
|
| 8344348 |
Memory device |
Wolodymyr Czubatyj |
2013-01-01 |
|
| 8217379 |
Arsenic-containing variable resistance materials |
Carl Schell, Jon Maimon |
2012-07-10 |
|
| 8211742 |
Lateral phase change memory |
Richard K. Dodge |
2012-07-03 |
$4,877,000 |
| 8134860 |
Shunted phase change memory |
— |
2012-03-13 |
$53,474,000 |
| 8120940 |
Programmable resistance memory |
— |
2012-02-21 |
|
| 8062921 |
Phase change memories with improved programming characteristics |
Carl Schell, Sergey Kostylev, Stephen J. Hudgens |
2011-11-22 |
$16,463,000 |
| 7916514 |
Shunted phase change memory |
— |
2011-03-29 |
$16,404,000 |
| 7864567 |
Programming a normally single phase chalcogenide material for use as a memory of FPLA |
George Andrew Gordon, Ward Parkinson, John M. Peters, Tyler Lowrey, Stanford R. Ovshinsky +2 more |
2011-01-04 |
|
| 7839674 |
Programmable matrix array with chalcogenide material |
Tyler Lowrey, Ward Parkinson |
2010-11-23 |
|
| 7816660 |
Lateral phase change memory |
Richard K. Dodge |
2010-10-19 |
$4,071,000 |
| 7786462 |
Chalcogenide devices exhibiting stable operation from the as-fabricated state |
Sergey Kostylev, Tyler Lowrey, Wolodymyr Czubatyj |
2010-08-31 |
|
| 7663907 |
Die customization using programmable resistance memory elements |
Tyler Lowrey, Edward J. Spall |
2010-02-16 |
|
| 7649191 |
Forming a carbon layer between phase change layers of a phase change memory |
Wolodymyr Czubatyj, Sergey Kostylev, Tyler Lowrey |
2010-01-19 |
$22,167,000 |
| 7646630 |
Programmable matrix array with chalcogenide material |
Tyler Lowrey, Ward Parkinson |
2010-01-12 |
|
| 7589364 |
Electrically rewritable non-volatile memory element and method of manufacturing the same |
Isamu Asano, Natsuki Sato, Tyler Lowrey, Wolodymyr Czubatyj, Stephen J. Hudgens |
2009-09-15 |
$6,722,000 |
| 7579210 |
Planar segmented contact |
— |
2009-08-25 |
|
| 7525117 |
Chalcogenide devices and materials having reduced germanium or telluruim content |
Sergey Kostylev, Tyler Lowrey, Wolodymyr Czubatyj |
2009-04-28 |
|
| 7504675 |
Phase change memories with improved programming characteristics |
Carl Schell, Sergey Kostylev, Stephen J. Hudgens |
2009-03-17 |
$18,451,000 |
| 7499315 |
Programmable matrix array with chalcogenide material |
Tyler Lowrey, Ward Parkinson |
2009-03-03 |
|
