Issued Patents All Time
Showing 25 most recent of 303 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 11443937 | Semiconductor ICF target processing | — | 2022-09-13 |
| 11427905 | Controlled variable thickness film deposition on a non-flat substrate for high volume manufacturing | — | 2022-08-30 |
| 10522757 | Dual resistive-material regions for phase change memory devices | Yudong Kim, Ilya V. Karpov, Charles C. Kuo, Maria Santina Marangon, Greg Atwood | 2019-12-31 |
| 10522756 | Dual resistance heater for phase change memory devices | Yudong Kim, Ilya V. Karpov, Charles C. Kuo, Maria Santina Marangon, Greg Atwood | 2019-12-31 |
| 9570163 | Immunity of phase change material to disturb in the amorphous phase | George Andrew Gordon, Semyon D. Savransky, Ward Parkinson, Sergey Kostylev, James Reed +2 more | 2017-02-14 |
| 9251895 | Immunity of phase change material to disturb in the amorphous phase | George Andrew Gordon, Semyon D. Savransky, Ward Parkinson, Sergey Kostylev, James Reed +2 more | 2016-02-02 |
| 9036409 | Immunity of phase change material to disturb in the amorphous phase | George Andrew Gordon, Semyon D. Savransky, Ward Parkinson, Sergey Kostylev, James Reed +2 more | 2015-05-19 |
| 9000408 | Memory device with low reset current | Sergey Kostylev, Wolodymyr Czubatyj | 2015-04-07 |
| 8952299 | Dual resistance heater for phase change devices and manufacturing method thereof | Yudong Kim, Ilya V. Karpov, Charles C. Kuo, Greg Atwood, Maria Santina Marangon | 2015-02-10 |
| 8908413 | Programmable resistance memory | Carl Schell, Wally Czubatyj, Steve Hudgens, Jon Maimon, Jeff Fournier +2 more | 2014-12-09 |
| 8861293 | Immunity of phase change material to disturb in the amorphous phase | George Andrew Gordon, Semyon D. Savransky, Ward Parkinson, Sergey Kostylev, James Reed +2 more | 2014-10-14 |
| 8705306 | Method for using a bit specific reference level to read a phase change memory | Ward Parkinson, Ferdinando Bedeschi, Claudio Resta, Roberto Gastaldi, Giulio Casagrande | 2014-04-22 |
| 8658510 | Processing phase change material to improve programming speed | Stephen J. Hudgens | 2014-02-25 |
| 8634226 | Immunity of phase change material to disturb in the amorphous phase | George Andrew Gordon, Semyon D. Savransky, Ward Parkinson, Sergey Kostylev, James Reed +2 more | 2014-01-21 |
| 8581223 | Memory device and method of making same | Wolodymyr Czubatyj, Sergey Kostylev | 2013-11-12 |
| 8513576 | Dual resistance heater for phase change devices and manufacturing method thereof | Yudong Kim, Ilya V. Karpov, Charles C. Kuo, Greg Atwood, Maria Santina Marangon | 2013-08-20 |
| 8379439 | Programmable matrix array with chalcogenide material | Ward Parkinson, Guy Wicker | 2013-02-19 |
| 8363446 | Multilevel variable resistance memory cell utilizing crystalline programming states | Wolodymyr Czubatyj, Charles H. Dennison, Carl Schell | 2013-01-29 |
| 8363458 | Memory controller | — | 2013-01-29 |
| 8351250 | Programmable resistance memory | — | 2013-01-08 |
| 8350661 | Breakdown layer via lateral diffusion | Wolodymyr Czubatyj, Edward J. Spall | 2013-01-08 |
| 8344350 | Phase change device with offset contact | Wolodymyr Czubatyj | 2013-01-01 |
| 8269206 | Processing phase change material to improve programming speed | Stephen J. Hudgens | 2012-09-18 |
| 8259525 | Using a bit specific reference level to read a memory | Ward Parkinson, Ferdinando Bedeschi, Claudio Resta, Roberto Gastaldi, Giulio Casagrande | 2012-09-04 |
| 8228719 | Thin film input/output | — | 2012-07-24 |