| 10629652 |
Dual-layer dielectric in memory device |
Michael J. Bernhardt, Denzil S. Frost, Tuman Earl Allen, III, Kevin Lee Baker, Kolya Yastrebenetsky +1 more |
2020-04-21 |
$45,742,000 |
| 10522757 |
Dual resistive-material regions for phase change memory devices |
Ilya V. Karpov, Charles C. Kuo, Maria Santina Marangon, Tyler Lowrey, Greg Atwood |
2019-12-31 |
$19,928,000 |
| 10522756 |
Dual resistance heater for phase change memory devices |
Ilya V. Karpov, Charles C. Kuo, Maria Santina Marangon, Tyler Lowrey, Greg Atwood |
2019-12-31 |
$19,928,000 |
| 10134809 |
Dual-layer dielectric in memory device |
Michael J. Bernhardt, Denzil S. Frost, Tuman Earl Allen, III, Kevin Lee Baker, Kolya Yastrebenetsky +1 more |
2018-11-20 |
$25,900,000 |
| 10048539 |
Method of manufacturing backlight unit of curved display device |
Kangwoo Lee |
2018-08-14 |
|
| 9704923 |
Dual-layer dielectric in memory device |
Michael J. Bernhardt, Denzil S. Frost, Tuman Earl Allen, III, Kevin Lee Baker, Kolya Yastrebenetsky +1 more |
2017-07-11 |
$8,311,000 |
| 9203024 |
Copper compatible chalcogenide phase change memory with adjustable threshold voltage |
Charles C. Kuo, Gianpaolo Spadini |
2015-12-01 |
$16,442,000 |
| 9159915 |
Phase change memory with threshold switch select device |
Ilya V. Karpov, Sean Lee, Greg Atwood |
2015-10-13 |
|
| 8952299 |
Dual resistance heater for phase change devices and manufacturing method thereof |
Ilya V. Karpov, Charles C. Kuo, Greg Atwood, Maria Santina Marangon, Tyler Lowrey |
2015-02-10 |
$7,791,000 |
| 8637342 |
Phase change memory with threshold switch select device |
Ilya V. Karpov, Sean Lee, Gregory E. Atwood |
2014-01-28 |
|
| 8536013 |
Forming phase change memory cells |
Fabio Pellizzer |
2013-09-17 |
$4,750,000 |
| 8513576 |
Dual resistance heater for phase change devices and manufacturing method thereof |
Ilya V. Karpov, Charles C. Kuo, Greg Atwood, Maria Santina Marangon, Tyler Lowrey |
2013-08-20 |
$4,653,000 |
| 8222627 |
Process for manufacturing a copper compatible chalcogenide phase change memory element and corresponding phase change memory element |
Charles C. Kuo |
2012-07-17 |
$4,638,000 |
| 8026173 |
Semiconductor structure, in particular phase change memory device having a uniform height heater |
Ilya V. Karpov, Ming Jin, Shyam Prasad Teegapuram, Jinwook Lee |
2011-09-27 |
$9,962,000 |
| 7973302 |
Forming phase change memory cells |
Fabio Pellizzer |
2011-07-05 |
$7,817,000 |
| 7880123 |
Dual resistance heater for phase change devices and manufacturing method thereof |
Ilya V. Karpov, Charles C. Kuo, Greg Atwood, Maria Santina Marangon, Tyler Lowrey |
2011-02-01 |
|
| 7847333 |
Structured, electrically-formed floating gate for flash memories |
Charles C. Kuo |
2010-12-07 |
|
| 7709822 |
Phase change memory and manufacturing method thereof |
Ilya V. Karpov, Charles C. Kuo, Greg Atwood |
2010-05-04 |
$5,132,000 |
| 7534625 |
Phase change memory with damascene memory element |
Ilya V. Karpov, Charles C. Kuo, Fabio Pellizzer |
2009-05-19 |
|
| 7465625 |
Flash memory cell having reduced floating gate to floating gate coupling |
Been-Jon Woo, Albert Fazio |
2008-12-16 |
|
| 7374996 |
Structured, electrically-formed floating gate for flash memories |
Charles C. Kuo |
2008-05-20 |
|
| 7348618 |
Flash memory cell having reduced floating gate to floating gate coupling |
Been-Jon Woo, Albert Fazio |
2008-03-25 |
$11,219,000 |
| 7259023 |
Forming phase change memory arrays |
Charles C. Kuo, Ilya V. Karpov, Greg Atwood |
2007-08-21 |
$15,364,000 |
| 7135696 |
Phase change memory with damascene memory element |
Ilya V. Karpov, Charles C. Kuo, Fabio Pellizzer |
2006-11-14 |
$28,395,000 |
| 6265292 |
Method of fabrication of a novel flash integrated circuit |
Krishna K. Parat, Raghupathy Giridhar, Cheng C. Hu, Daniel Xu, Glen Wada |
2001-07-24 |
$166,417,000 |
