{"@context": "https://schema.org", "@type": "BreadcrumbList", "itemListElement": [{"@type": "ListItem", "position": 1, "name": "Home", "item": "https://www.patentleaderboard.com/"}, {"@type": "ListItem", "position": 2, "name": "Phase change memory and manufacturing method thereof", "item": "https://www.patentleaderboard.com/patent/7709822"}]}
Patent Leaderboard
USPTO Patent Rankings Data through Dec 31, 2025
Home › Phase change memory and manufacturing method thereof

Phase change memory and manufacturing method thereof

US Patent 7709822 · Granted May 4, 2010

Estimated economic value: $5,132,000 ⓘ

Assignee

Inventors

View full patent text on Google Patents →

More Patents by These Inventors

Compositional engineering of Schottky diode2025
ESD protection decoupled from diffusion2025
Backend electrostatic discharge diode apparatus and method of fabricating the sa2025
Ribbon or wire transistor stack with selective dipole threshold voltage shifter2024
Monolithic memory stack2024
Formation tester tool2023
Vertical memory cell with self-aligned thin film transistor2023
3D memory array with memory cells having a 3D selector and a storage component2023
Epitaxial layers on contact electrodes for thin- film transistors2022
Digital-to-analog converters having multiple-gate transistor-like structure2022
Perpendicular spin transfer torque memory (pSTTM) devices with enhanced thermal 2022
Perpendicular spin transfer torque magnetic mechanism2022