Patent Leaderboard
USPTO Patent Rankings Data through Dec 31, 2025
Home › Process for manufacturing a copper compatible chalcogenide phase change memory element and corresponding phase change memory element

Process for manufacturing a copper compatible chalcogenide phase change memory element and corresponding phase change memory element

US Patent 8222627 · Granted Jul 17, 2012

Estimated economic value: $4,638,000 ⓘ

Assignee

Inventors

View full patent text on Google Patents →

More Patents by These Inventors

Compositional engineering of Schottky diode2025
ESD protection decoupled from diffusion2025
Ribbon or wire transistor stack with selective dipole threshold voltage shifter2024
Monolithic memory stack2024
Formation tester tool2023
Vertical memory cell with self-aligned thin film transistor2023
3D memory array with memory cells having a 3D selector and a storage component2023
Epitaxial layers on contact electrodes for thin- film transistors2022
Digital-to-analog converters having multiple-gate transistor-like structure2022
Perpendicular spin transfer torque memory (pSTTM) devices with enhanced thermal 2022
Perpendicular spin transfer torque magnetic mechanism2022
Magnetic tunnel junction (MTJ) devices with a synthetic antiferromagnet (SAF) st2022