Patent Leaderboard
USPTO Patent Rankings Data through Dec 31, 2025
Home › Magnetic tunnel junction (MTJ) devices with a synthetic antiferromagnet (SAF) structure including a magnetic skyrmion

Magnetic tunnel junction (MTJ) devices with a synthetic antiferromagnet (SAF) structure including a magnetic skyrmion

US Patent 11430943 · Granted Aug 30, 2022

Estimated economic value: $13,077,000 ⓘ

Assignee

Inventors

View full patent text on Google Patents →

More Patents by These Inventors

Memory comprising conductive ferroelectric material in series with dielectric ma2025
Capacitor with dual dielectric layers2025
Subtractively patterned interconnect structures for integrated circuits2025
Differentially programmable magnetic tunnel junction device and system including2025
Integrating embedded memory with logic interconnects2025
Method of forming capacitors through wafer bonding2025
Method of integrating a capacitor including a non-linear polar material with a t2025
Capacitor with an electrically conductive layer coupled with a metal layer of th2025
Gate coupled non-linear polar material based capacitors for memory and logic2025
Compositional engineering of Schottky diode2025
Compositional engineering of Schottky diode2025
Thin film transistors having strain-inducing structures integrated with 2D chann2025