Issued Patents All Time
Showing 1–25 of 131 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 11894037 | First fire and cold start in memories with threshold switching selectors | Michael Grobis, James W. Reiner, Michael Nicolas Albert Tran, Juan Saenz | 2024-02-06 |
| 11894062 | Semi-circle drain side select gate maintenance by selective semi-circle dummy word line program | Xiang Yang, Deepanshu Dutta, Shubhajit Mukherjee | 2024-02-06 |
| 11887677 | Quick pass write programming techniques in a memory device | Muhammad Masuduzzaman, Deepanshu Dutta | 2024-01-30 |
| 11798625 | Program dependent biasing of unselected sub-blocks | Xiang Yang, Deepanshu Dutta | 2023-10-24 |
| 11688469 | Non-volatile memory with sub-block based self-boosting scheme | Dengtao Zhao, Xiang Yang, Ken Oowada, Guirong Liang | 2023-06-27 |
| 11646081 | Reliability compensation for uneven NAND block degradation | Xiang Yang, Peter Rabkin, Henry Chin, Ken Oowada, Dengtao Zhao | 2023-05-09 |
| 11625172 | Programming memory cells with concurrent redundant storage of data for power loss protection | Xiang Yang, Toru Miwa, Ken Oowada | 2023-04-11 |
| 11551781 | Programming memory cells with concurrent storage of multi-level data as single-level data for power loss protection | Xiang Yang, Toru Miwa, Ken Oowada | 2023-01-10 |
| 11545221 | Concurrent programming of multiple cells for non-volatile memory devices | Xiang Yang, Ken Oowada, Toru Miwa | 2023-01-03 |
| 11397790 | Vector matrix multiplication with 3D NAND | Federico Nardi, Won Ho Choi | 2022-07-26 |
| 11342028 | Concurrent programming of multiple cells for non-volatile memory devices | Xiang Yang, Aaron Lee, Ken Oowada, Toru Miwa | 2022-05-24 |
| 11328204 | Realization of binary neural networks in NAND memory arrays | Won Ho Choi, Pi-Feng Chiu, Wen-Qiang Ma, Minghai Qin, Martin Lueker-Boden | 2022-05-10 |
| 11170869 | Dual data protection in storage devices | Daniel L. Helmick | 2021-11-09 |
| 11101326 | Methods of forming a phase change memory with vertical cross-point structure | Federico Nardi, Christopher J. Petti | 2021-08-24 |
| 11088206 | Methods of forming a phase change memory with vertical cross-point structure | Federico Nardi, Christopher J. Petti | 2021-08-10 |
| 11081198 | Non-volatile memory with countermeasure for over programming | Xiang Yang | 2021-08-03 |
| 11011242 | Bit line voltage control for damping memory programming | Xiang Yang, Deepanshu Dutta, Tai-Yuan Tseng, Yan Li | 2021-05-18 |
| 10978156 | Concurrent programming of multiple cells for non-volatile memory devices | Xiang Yang, Aaron Lee, Ken Oowada, Toru Miwa | 2021-04-13 |
| 10978145 | Programming to minimize cross-temperature threshold voltage widening | Biswajit Ray, Peter Rabkin, Mohan Dunga, Changyuan Chen | 2021-04-13 |
| 10910083 | Leaky memory hole repair at fabrication joint | Xiang Yang | 2021-02-02 |
| 10839928 | Non-volatile memory with countermeasure for over programming | Xiang Yang | 2020-11-17 |
| 10748622 | State adaptive predictive programming | Lei Lin, Zhuojie Li, Tai-Yuan Tseng, Henry Chin | 2020-08-18 |
| 10643720 | Bit line voltage control for damping memory programming | Xiang Yang, Deepanshu Dutta, Tai-Yuan Tseng, Yan Li | 2020-05-05 |
| 10573395 | Source voltage modulated reads in non-volatile memories | Xiang Yang | 2020-02-25 |
| 10535412 | Single pulse verification of memory cells | Xiang Yang, Huai-Yuan Tseng, Deepanshu Dutta, Jianzhi Wu | 2020-01-14 |