Issued Patents All Time
Showing 25 most recent of 38 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 10978145 | Programming to minimize cross-temperature threshold voltage widening | Biswajit Ray, Peter Rabkin, Mohan Dunga, Gerrit Jan Hemink | 2021-04-13 |
| 10818366 | Post write erase conditioning | Mohan Dunga, Biswajit Ray | 2020-10-27 |
| 10636501 | Memory device with reduced neighbor word line interference using adjustable voltage on source-side unselected word line | Han-Ping Chen, Ching-Huang Lu, Vinh Diep | 2020-04-28 |
| 10566059 | Three dimensional NAND memory device with drain select gate electrode shared between multiple strings | Vinh Diep, Ching-Huang Lu, Henry Chin | 2020-02-18 |
| 10553294 | Post write erase conditioning | Mohan Dunga, Biswajit Ray | 2020-02-04 |
| 10535411 | System and method for string-based erase verify to create partial good blocks | Mohan Dunga, Anubhav Khandelwal, Biswajit Ray | 2020-01-14 |
| 10304559 | Memory write verification using temperature compensation | Himanshu Hemant Naik, Biswajit Ray, Mohan Dunga | 2019-05-28 |
| 10304551 | Erase speed based word line control | Biswajit Ray, Mohan Dunga, Gerrit Jan Hemink | 2019-05-28 |
| 10269439 | Post write erase conditioning | Mohan Dunga, Biswajit Ray | 2019-04-23 |
| 10204689 | Non-volatile memory with methods to reduce creep-up field between dummy control gate and select gate | Ching-Huang Lu, Anubhav Khandelwal, Cynthia Hsu, Yingda Dong | 2019-02-12 |
| 10074440 | Erase for partially programmed blocks in non-volatile memory | Biswajit Ray, Mohan Dunga | 2018-09-11 |
| 10008273 | Cell current based bit line voltage | Biswajit Ray, Gerrit Jan Hemink, Mohan Dunga, Bijesh Rajamohanan | 2018-06-26 |
| 9972396 | System and method for programming a memory device with multiple writes without an intervening erase | Himanshu Hemant Naik, Mohan Dunga, Biswajit Ray | 2018-05-15 |
| 9892790 | Method of programming a continuous-channel flash memory device | Yuniarto Widjaja, John W. Cooksey, Feng Gao, Ya-Fen Lin, Dana Lee | 2018-02-13 |
| 9711231 | System solution for first read issue using time dependent read voltages | Chris Yip, Philip Reusswig, Nian Niles Yang, Grishma Shah, Abuzer Dogan +3 more | 2017-07-18 |
| 9704588 | Apparatus and method for preconditioning currents to reduce errors in sensing for non-volatile memory | Biswajit Ray, Mohan Dunga | 2017-07-11 |
| 9704595 | Self-detecting a heating event to non-volatile storage | Alon Eyal, Idan Alrod, Eran Sharon, Ishai Ilani, Mark Murin +3 more | 2017-07-11 |
| 9583206 | Data storage device having reflow awareness | Ting Luo, Jianmin Huang, Guirong Liang | 2017-02-28 |
| 9543028 | Word line dependent temperature compensation scheme during sensing to counteract cross-temperature effect | Biswajit Ray, Mohan Dunga | 2017-01-10 |
| 9530512 | Temperature dependent sensing scheme to counteract cross-temperature threshold voltage distribution widening | Biswajit Ray, Abuzer Dogan | 2016-12-27 |
| 9472270 | Nonvolatile storage reflow detection | Guirong Liang, Masaaki Higashitani | 2016-10-18 |
| 9449693 | Split gate NAND flash memory structure and array, method of programming, erasing and reading thereof, and method of manufacturing | Yuniarto Widjaja, John W. Cooksey, Feng Gao, Ya-Fen Lin, Dana Lee | 2016-09-20 |
| RE46056 | Programming non-volatile storage with fast bit detection and verify skip | Jeffrey W. Lutze, Yingda Dong, Hua-Ling Cynthia Hsu | 2016-07-05 |
| 9201788 | In-situ block folding for nonvolatile memory | Chris Avila, Gautam Dusija, Deepak Raghu, Cynthia Hsu, Farookh Moogat | 2015-12-01 |
| 8886877 | In-situ block folding for nonvolatile memory | Chris Avila, Gautam Dusija, Deepak Raghu, Cynthia Hsu, Farookh Moogat | 2014-11-11 |