MT

Masanori Tsutsumi

ST Sandisk Technologies: 40 patents #57 of 2,224Top 3%
Sumitomo Electric Industries: 4 patents #6,367 of 21,551Top 30%
Tdk: 3 patents #1,522 of 3,796Top 45%
PA Panasonic: 2 patents #9,678 of 21,108Top 50%
FL Fujitsu Semiconductor Limited: 1 patents #612 of 1,301Top 50%
SK Suzuki Jidosha Kogyo: 1 patents #29 of 121Top 25%
Overall (All Time): #52,030 of 4,157,543Top 2%
51
Patents All Time

Issued Patents All Time

Showing 25 most recent of 51 patents

Patent #TitleCo-InventorsDate
12424602 Bonded assembly containing conductive via structures extending through word lines in a staircase region and methods for making the same Hiroyuki Ogawa, Mitsuteru Mushiga 2025-09-23
12382638 Three-dimensional memory device and method of making thereof using double pitch word line formation Naoki Takeguchi, Seiji Shimabukuro, Tatsuya Hinoue 2025-08-05
12354944 Three-dimensional memory device containing plural metal oxide blocking dielectric layers and method of making thereof Naohiro Hosoda 2025-07-08
12342537 Three-dimensional memory device containing epitaxial pedestals and top source contact Adarsh Rajashekhar, Raghuveer S. Makala, Fei Zhou 2025-06-24
12101936 Three dimensional memory device and method of making thereof by forming channel and memory film after word line replacement Tatsuya Hinoue, Yusuke Mukae, Ryousuke Itou, Akio Nishida, Ramy Nashed Bassely Said 2024-09-24
12058854 Three-dimensional memory device with isolated source strips and method of making the same Takaaki Iwai, Akio Nishida 2024-08-06
12046285 Three-dimensional memory device and method of making thereof using double pitch word line formation Naoki Takeguchi, Seiji Shimabukuro, Tatsuya Hinoue 2024-07-23
12029037 Three-dimensional memory device with discrete charge storage elements and methods for forming the same Yusuke Mukae, Tatsuya Hinoue, Yuki KASAI 2024-07-02
11942429 Three-dimensional memory device and method of making thereof using double pitch word line formation Tatsuya Hinoue, Naoki Takeguchi, Seiji Shimabukuro 2024-03-26
11894298 Three-dimensional memory device containing amorphous and crystalline blocking dielectric layers Naohiro Hosoda, Shuichi Hamaguchi, Kazuki Isozumi, Genta Mizuno, Yusuke Mukae +2 more 2024-02-06
11889684 Three-dimensional memory device with separated source-side lines and method of making the same Shinsuke Yada, Mitsuteru Mushiga, Akio Nishida, Hiroyuki Ogawa, Teruo Okina 2024-01-30
11705881 Branching filter Takuya Sato, Kazuhiro Tsukamoto 2023-07-18
11417621 Memory die with source side of three-dimensional memory array bonded to logic die and methods of making the same Naohiro Hosoda, Sayako Nagamine 2022-08-16
RE49165 On-pitch drain select level isolation structure for three-dimensional memory device and method of making the same Yanli Zhang, Shinsuke Yada, Sayako Nagamine, Johann Alsmeier 2022-08-09
11393836 Three-dimensional memory device with separated source-side lines and method of making the same Shinsuke Yada, Mitsuteru Mushiga, Akio Nishida, Hiroyuki Ogawa, Teruo Okina 2022-07-19
11367733 Memory die with source side of three-dimensional memory array bonded to logic die and methods of making the same Naohiro Hosoda, Kota Funayama 2022-06-21
11289416 Three-dimensional memory device containing amorphous and crystalline blocking dielectric layers Naohiro Hosoda, Shuichi Hamaguchi, Kazuki Isozumi, Genta Mizuno, Yusuke Mukae +2 more 2022-03-29
11152284 Three-dimensional memory device with a dielectric isolation spacer and methods of forming the same Jo SATO, Hisaya Sakai 2021-10-19
10957680 Semiconductor die stacking using vertical interconnection by through-dielectric via structures and methods for making the same Shinsuke Yada, Sayako Nagamine, Yuji Fukano, Akio Nishida, Christopher J. Petti 2021-03-23
10903232 Three-dimensional memory devices containing memory stack structures with laterally separated charge storage elements and method of making thereof 2021-01-26
10903222 Three-dimensional memory device containing a carbon-doped source contact layer and methods for making the same Kiyohiko Sakakibara, Masaaki Higashitani, Zhixin Cui 2021-01-26
10861869 Three-dimensional memory device having a slimmed aluminum oxide blocking dielectric and method of making same Ryo Nakamura, Yu Ueda, Tatsuya Hinoue, Shigehisa Inoue, Genta Mizuno 2020-12-08
10748927 Three-dimensional memory device with drain-select-level isolation structures and method of making the same Shigehisa Inoue, Tomohiro Kubo, James Kai 2020-08-18
10748925 Three-dimensional memory device containing channels with laterally pegged dielectric cores Manabu Kakazu, Raghuveer S. Makala, Senaka Kanakamedala 2020-08-18
10559582 Three-dimensional memory device containing source contact to bottom of vertical channels and method of making the same Masatoshi Nishikawa, Shinsuke Yada 2020-02-11