Issued Patents All Time
Showing 26–50 of 51 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 10453798 | Three-dimensional memory device with gated contact via structures and method of making thereof | Naohiro Hosoda | 2019-10-22 |
| 10236300 | On-pitch drain select level isolation structure for three-dimensional memory device and method of making the same | Yanli Zhang, Shinsuke Yada, Sayako Nagamine, Johann Alsmeier | 2019-03-19 |
| 10192878 | Three-dimensional memory device with self-aligned multi-level drain select gate electrodes | Shinsuke Yada, Yanli Zhang | 2019-01-29 |
| 10141331 | Three-dimensional memory device containing support pillars underneath a retro-stepped dielectric material and method of making thereof | Hiromasa Susuki, Shigehisa Inoue, Junji Oh, Kensuke Yamaguchi, Seiji Shimabukuro +3 more | 2018-11-27 |
| 10083982 | Three-dimensional memory device having select gate electrode that is thicker than word lines and method of making thereof | Keisuke SHIGEMURA, Junichi Ariyoshi, Michiaki Sano, Yanli Zhang, Raghuveer S. Makala | 2018-09-25 |
| 9991277 | Three-dimensional memory device with discrete self-aligned charge storage elements and method of making thereof | Kengo Kajiwara, Raghuveer S. Makala | 2018-06-05 |
| 9871500 | Multilayer electronic component | Kazuhiro Tsukamoto, Manabu Kitami, Toshiyuki TAKAMI, SHOHEI KUSUMOTO, Noriyuki Hirabayashi | 2018-01-16 |
| 9812463 | Three-dimensional memory device containing vertically isolated charge storage regions and method of making thereof | Rahul Sharangpani, Raghuveer S. Makala, Senaka Kanakamedala, Fei Zhou, Somesh Peri +4 more | 2017-11-07 |
| 9780034 | Three-dimensional memory device containing annular etch-stop spacer and method of making thereof | Kota Funayama, Ryoichi Ehara, Youko Furihata, Zhenyu Lu, Tong Zhang +1 more | 2017-10-03 |
| 9754820 | Three-dimensional memory device containing an aluminum oxide etch stop layer for backside contact structure and method of making thereof | Motoki KAWASAKI, Rahul Sharangpani | 2017-09-05 |
| 9754956 | Uniform thickness blocking dielectric portions in a three-dimensional memory structure | Shinsuke Yada | 2017-09-05 |
| 9716105 | Three-dimensional memory device with different thickness insulating layers and method of making thereof | — | 2017-07-25 |
| 9666594 | Multi-charge region memory cells for a vertical NAND device | Genta Mizuno, Jayavel Pachamuthu | 2017-05-30 |
| 9576967 | Method of suppressing epitaxial growth in support openings and three-dimensional memory device containing non-epitaxial support pillars in the support openings | Hajime Kimura, Seiji Shimabukuro, Shuji Minagawa, Michiaki Sano | 2017-02-21 |
| 9530787 | Batch contacts for multiple electrically conductive layers | Naoki Ihata, Shinsuke Yada, Ryoichi Honma | 2016-12-27 |
| 9413328 | Diplexer including two bandpass filters | Kazuhiro Tsukamoto | 2016-08-09 |
| 9305937 | Bottom recess process for an outer blocking dielectric layer inside a memory opening | Hiroshi Sasaki, Hiroyuki Ogawa, Michiaki Sano, Masato Miyamoto, Kensuke Yamaguchi +1 more | 2016-04-05 |
| 9305849 | Method of making a three dimensional NAND device | Shigehiro Fujino, Sateesh Koka, Senaka Kanakamedala, Yanli Zhang, Raghuveer S. Makala +3 more | 2016-04-05 |
| 7892969 | Method of manufacturing semiconductor device | Jusuke Ogura | 2011-02-22 |
| 7786513 | Semiconductor integrated circuit device and power source wiring method therefor | — | 2010-08-31 |
| 7456478 | MOS transistor circuit | — | 2008-11-25 |
| 7227211 | Decoupling capacitors and semiconductor integrated circuit | Junichi Yano | 2007-06-05 |
| 7202725 | Delay control circuit device, and a semiconductor integrated circuit device and a delay control method using said delay control circuit device | Junichi Yano | 2007-04-10 |
| 6818929 | Standard cell for plural power supplies and related technologies | Junichi Yano, Fumihiro Kimura, Masayuki Matsuda | 2004-11-16 |
| 6810340 | Electromagnetic disturbance analysis method and apparatus and semiconductor device manufacturing method using the method | Kenji Shimazaki, Shouzou Hirano, Ritsuko Kurazono, Kaori Matsui, Hisato Yoshida +1 more | 2004-10-26 |